Document
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC2750
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 100V(Min) ·High Current Capability ·High Power Dissipation
APPLICATIONS ·Designed for high speed, high current switching industrial
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
150 V
VCEO
Collector-Emitter Voltage
100 V
VEBO
Emitter-Base Voltage
7V
IC Collector Current-Continuous 15 A
ICM Collector Current-Peak
30 A
IB Base Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ Junction Temperature
Tstg Storage Temperature Range
5A
100 W
150 ℃
-55~150
℃
isc website:www.iscsemi.cn
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC2750
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10A; IB1= 1A; L= 100μH
VCEX(SUS)1
Collector-Emitter Sustaining Voltage
IC= 10A; IB1= -IB= 1A; Ta= 125℃ L= 180μH; Clamped
VCEX(SUS)2
Collector-Emitter Sustaining Voltage
IC= 20A; IB1= 2A; IB2= 1A; Ta= 125℃; L= 180μH; Clamped
VCE(sat) Collector-Emitter Saturation Voltage IC= 10A; IB= 1A
100 150 100
V V V 0.6 V
VBE(sat) Base-Emitter Saturation Voltage ICBO Collector Cutoff Current
IC= 10A; IB= 1A VCB= 100V; IE= 0
1.5 V 10 μA
ICER Collector Cutoff Current ICEX Collector Cutoff Current IEBO Emitter Cutoff Current
VCE= 100V; RBE= 50Ω; Ta= 125℃
VCE= 100V;VBE(off)= -1.5V; VCE= 100V;VBE(off)= -1.5V;Ta=125℃
VEB= 5V; IC= 0
1.0 mA
10 500
μA
10 μA
hFE-1
DC Current Gain
IC= 5A; VCE= 5V
30 120
hFE-2
DC Current Gain
IC= 10A; VCE= 5V
20
Switching Times
ton Turn-on Time tstg Storage Time tf Fall Time
IC= 10A, IB1= -IB2= 1A, VCC≈ 50V; RL= 5Ω
1.0 μs 1.5 μs 0.3 μs
hFE-1 Classifications ML K
30-60 40-80 60-120
isc website:www.iscsemi.cn
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