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C2750 Dataheets PDF



Part Number C2750
Manufacturers INCHANGE
Logo INCHANGE
Description Silicon NPN Power Transistor
Datasheet C2750 DatasheetC2750 Datasheet (PDF)

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SC2750 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 100V(Min) ·High Current Capability ·High Power Dissipation APPLICATIONS ·Designed for high speed, high current switching industrial applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 7V IC Collector Current-.

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INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SC2750 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 100V(Min) ·High Current Capability ·High Power Dissipation APPLICATIONS ·Designed for high speed, high current switching industrial applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 7V IC Collector Current-Continuous 15 A ICM Collector Current-Peak 30 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range 5A 100 W 150 ℃ -55~150 ℃ isc website:www.iscsemi.cn 1 INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SC2750 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10A; IB1= 1A; L= 100μH VCEX(SUS)1 Collector-Emitter Sustaining Voltage IC= 10A; IB1= -IB= 1A; Ta= 125℃ L= 180μH; Clamped VCEX(SUS)2 Collector-Emitter Sustaining Voltage IC= 20A; IB1= 2A; IB2= 1A; Ta= 125℃; L= 180μH; Clamped VCE(sat) Collector-Emitter Saturation Voltage IC= 10A; IB= 1A 100 150 100 V V V 0.6 V VBE(sat) Base-Emitter Saturation Voltage ICBO Collector Cutoff Current IC= 10A; IB= 1A VCB= 100V; IE= 0 1.5 V 10 μA ICER Collector Cutoff Current ICEX Collector Cutoff Current IEBO Emitter Cutoff Current VCE= 100V; RBE= 50Ω; Ta= 125℃ VCE= 100V;VBE(off)= -1.5V; VCE= 100V;VBE(off)= -1.5V;Ta=125℃ VEB= 5V; IC= 0 1.0 mA 10 500 μA 10 μA hFE-1 DC Current Gain IC= 5A; VCE= 5V 30 120 hFE-2 DC Current Gain IC= 10A; VCE= 5V 20 Switching Times ton Turn-on Time tstg Storage Time tf Fall Time IC= 10A, IB1= -IB2= 1A, VCC≈ 50V; RL= 5Ω 1.0 μs 1.5 μs 0.3 μs  hFE-1 Classifications ML K 30-60 40-80 60-120 isc website:www.iscsemi.cn 2 .


2SC2750 C2750 SD211DE-2


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