2SC2750

isc Silicon NPN Power Transistor 2SC2750 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 100V(Min) ·High Current Capability ·High Power Dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high speed, high current switching industrial applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 15 A ICM Collector Current-Peak 30 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 5 A 100 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC2750 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB1= 0 100 V VCE(sat) VBE(sat) ICBO ICER ICEX IEBO Collector-Emitter Saturation Voltage IC= 10A; IB= 1A Base-Emitter Saturation Voltage IC= 10A; IB= 1A Collector Cutoff Current Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current VCB= 100V; IE= 0 VCE= 100V; RBE= 50Ω; Ta= 125℃ VCE= 100V;VBE(off)= -1.5V; VCE= 100V;VBE(off)= -1.5V;Ta=125℃ VEB= 5V; IC= 0 0.6 V 1.5 V 10 μA 1.0 mA 10 500 μA 10 μA hFE-1 hFE-2 DC Current Gai...