2N5415

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON HIGH VOLTAGE TRANSISTOR 2N 5415, 16 TO-39 Metal Can Package High Speed Switching and Linear amplifier Appliances in Military, Industrial and Commercial Equipment. ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL 2N5415 2N5416 Collector Emitter Voltage VCEO 200 300 Collector Base Voltage VCBO 200 350 Emitter Base Voltage VEBO 4 6 Collector Current Continuous IC (--------------------1------------------) Base Current Continuous IB (-----------------0.5------------------) Power Dissipation @ Ta=50ºC PD (--------------------1------------------) Derate Above 25ºC Power Dissipation@ Tc=25ºC PD (------------------10------------------- Derate Above 25ºC Junction Temperature Tj (--------------------200----------------- Operating And Storage Junction Tstg -65 to +200 Temperature Range UNITS V V V A A W mW/ºC W mW/ºC ºC THERMAL RESISTANCE Junction to Ambient Junction to Case Rth(j-a) Rth(j-c) 150 ºC/W 17.5 ºC/W ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION Collector Emitter Breakdown Voltage BVCEO(sus)* IC=50mA,IB=0 Collector Cut off Current ICBO VCB=175V, IE=0 VCB=280V, IE=0 Collector Cutoff Current ICEO VCE=150V, IB=0 VCE=250V, IB=0 Emitter Cut off Current IEBO VEB=4V, IC=0 VEB=6V, IC=0 2N5415 >200 <50 <50 <20 2N5416 >300 <50 <50 <20 UNITS...