VCES = 600V IC = 30A, TC =100°C
IRGP6630DPbF IRGP6630D-EPbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Re...
VCES = 600V IC = 30A, TC =100°C
IRGP6630DPbF IRGP6630D-EPbF
Insulated Gate Bipolar
Transistor with Ultrafast Soft Recovery Diode
C C
C
tSC 5µs, TJ(max) = 175°C
VCE(ON) typ. = 1.65V @ IC = 18A
Applications Welding H Bridge Converters
G
E
n-channel
G Gate
E C G IRGP6630DPbF TO‐247AC
C Collector
GCE
IRGP6630D‐EPbF TO‐247AD
E Emitter
Features Low VCE(ON) and Switching Losses Optimized Diode for Full Bridge Hard Switch Converters
Square RBSOA and Maximum Temperature of 175°C
5µs Short Circuit Positive VCE (ON) Temperature Co-efficient Lead-free, RoHS compliant
Benefits
High Efficiency in a Wide Range of Applications
Optimized for Welding and H Bridge Converters Improved Reliability due to Rugged Hard Switching Performance and High Power Capability Enables Short Circuit Protection Operation Excellent Current Sharing in Parallel Operation Environmentally friendly
Base part number
IRGP6630DPbF IRGP6630D-EPbF
Package Type
TO-247AC TO-247AD
Standard Pack
Form
Quantity
Tube
25
Tube
25
Orderable Part Number
IRGP6630DPbF IRGP6630D-EPbF
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25°C
IC @ TC = 100°C
ICM ILM IFRM @ TC = 100°C
Collector-to-Emitter Voltage Continuous Collector Current
Continuous Collector Current
Pulse Collector Current, VGE = 15V Clamped Inductive Load Current, VGE = 20V Diode Repetitive Peak Forward Current
VGE
PD @ TC = 25°C PD @ TC = 100°C TJ TSTG
Continuous Gate-to-Emitter Voltage
Maximum Power Dissipation Maximum Pow...