Document
2SK4112
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)
2SK4112
Switching Regulator Applications
• Low drain-source ON resistance: RDS (ON) = 0.75 (typ.) • High forward transfer admittance: |Yfs| = 5.5S (typ.) • Low leakage current: IDSS = 100 A (VDS = 600 V) • Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage
Drain current
DC (Note 1)
Pulse (t = 1 ms) (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy (Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS VDGR VGSS
ID
IDP
PD
EAS
IAR EAR Tch Tstg
600 600 ±30 10
30
45
251
10 4.5 150 -55~150
V V V
A
W mJ A mJ °C °C
JEDEC
―
JEITA
SC-67
TOSHIBA
2-10R1B
Weight: 1.9 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max Unit
Thermal resistance, channel to case Thermal resistance, channel to ambient
Rth (ch-c) Rth (ch-a)
2.78 °C/W 62.5 °C/W
Note 1: Ensure that the channel temperature does not exceed 150 . Note 2: VDD = 90 V, Tch = 25°C, L = 4.39 mH, IAR = 10 A, RG = 25 Ω Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Please handle with caution.
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2SK4112
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current Gate-source breakdown voltage Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance
Rise time
Turn-on time
Switching time
Fall time Turn-off time
Total gate charge Gate-source charge Gate-drain charge
Symbol
Test Condition
Min Typ. Max Unit
IGSS V (BR) GSS
IDSS V (BR) DSS
Vth RDS (ON)
⎪Yfs⎪ Ciss Crss Coss
tr
ton
VGS = ±25 V, VDS = 0 V IG =±10 µA, VDS = 0 V VDS = 600 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 4 A VDS = 10 V, ID = 4 A
VDS = 25 V, VGS = 0 V, f = 1 MHz
10 V VGS
0V 50 Ω
ID = 4 A VOUT RL = 50 Ω
⎯ ±30 ⎯ 600 2.0 ⎯ 1.5 ⎯ ⎯
⎯
⎯
⎯
tf ⎯
VDD ∼− 200 V
toff Duty <= 1%, tw = 10 µs
⎯
⎯ ⎯ ⎯ ⎯ ⎯ 0.75 5.5 1300 12 120 20
50
35
150
±10 ⎯ 100 ⎯ 4.0 1.0 ⎯ ⎯ ⎯
⎯ ⎯
⎯
⎯
⎯
µA V µA V V Ω S
pF
ns
Qg Qgs VDD ∼− 400 V, VGS = 10 V, ID = 10 A Qgd
⎯ 33 ⎯ ⎯ 18 ⎯ nC ⎯ 15 ⎯
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current (Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP VDSF
trr Qrr
Test Condition
⎯
⎯ IDR = 10 A, VGS = 0 V IDR = 10 A, VGS = 0 V, dIDR/dt = 100 A/µs
Min Typ. Max Unit
⎯ ⎯ 10 A
⎯ ⎯ 30 A
⎯ ⎯ −1.7 V
⎯ 1500 ⎯
ns
⎯ 19 ⎯ µC
Marking
K4112
Part No. (or abbreviation code) Lot No.
A line indicates lead (Pb)-free package or lead (Pb)-free finish.
2
2007-04-10
DRAIN CURRENT ID (A)
ID – VDS
10
10,8
6
COMMON SOURCE
Tc = 25°C
8 5.5 PULSE TEST
5.25 6
5 4
4.75
2 4.5
VGS = 4V 0 0 4 8 12 16 20
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN CURRENT ID (A)
2SK4112
ID – VDS
20 10 COMMON SOURCE 8 Tc = 25°C PULSE TEST
16 6
12
5.5 8
5.25 5
4 4.75 4.5
VGS = 4 V 0 0 10 20 30 40 50
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN CURRENT ID (A)
ID – VGS
20 COMMON SOURCE
16 VDS = 20 V PULSE TEST
12
8
Tc = −55°C 100 4
25
0 0 246 8
GATE-SOURCE VOLTAGE VGS
10
(V)
DRAIN-SOURCE VOLTAGE VDS (V)
VDS – VGS
10
8 ID = 10 A
6 COMMON SOURCE Tc = 25 PULSE TEST
4
5 2
2.5
0 0 4 8 12
GATE-SOURCE VOLTAGE
16
VGS
20
(V)
FORWARD TRANSFER ADMITTANCE ⎪Yfs⎪ (S)
⎪Yfs⎪ – ID
100
10 1
0.1 0.1
Tc = −55°C
25
100
COMMON SOURCE VDS = 20 V PULSE TEST 1 10 100
DRAIN CURRENT ID (A)
DRAIN-SOURCE ON RESISTANCE RDS (ON) (Ω)
RDS (ON) – ID
10 COMMON SOURCE
Tc = 25°C PULSE TEST
1 VGS = 10 V 15V
0.1 0.1
1 10
DRAIN CURRENT ID (A)
100
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DRAIN-SOURCE ON RESISTANCE RDS (ON) ( Ω)
RDS (ON) – Tc
4 COMMON SOURCE VGS = 10 V PULSE TEST
3
2 ID = 7.5A 4
12
0 −80 −40
0
40 80 120 160
CASE TEMPERATURE Tc (°C)
DRAIN REVERSE CURRENT IDR (A)
2SK4112
IDR – VDS
100 COMMON SOURCE Tc = 25°C PULSE TEST
10
1 10 5
31
VGS = 0, −1 V
0.1
0
−0.2
−0.4
−0.6
−0.8
−1.0 −1.2
DRAIN-SOURCE VOLTAGE VDS (V)
CAPACITANCE C (pF)
10000 1000 100
CAPACITANCE – VDS
Ciss Coss
10 COMMO.