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K4112 Dataheets PDF



Part Number K4112
Manufacturers Toshiba
Logo Toshiba
Description Field Effect Transistor
Datasheet K4112 DatasheetK4112 Datasheet (PDF)

2SK4112 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK4112 Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 0.75 (typ.) • High forward transfer admittance: |Yfs| = 5.5S (typ.) • Low leakage current: IDSS = 100 A (VDS = 600 V) • Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source vol.

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2SK4112 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK4112 Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 0.75 (typ.) • High forward transfer admittance: |Yfs| = 5.5S (typ.) • Low leakage current: IDSS = 100 A (VDS = 600 V) • Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Pulse (t = 1 ms) (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg 600 600 ±30 10 30 45 251 10 4.5 150 -55~150 V V V A W mJ A mJ °C °C JEDEC ― JEITA SC-67 TOSHIBA 2-10R1B Weight: 1.9 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case Thermal resistance, channel to ambient Rth (ch-c) Rth (ch-a) 2.78 °C/W 62.5 °C/W Note 1: Ensure that the channel temperature does not exceed 150 . Note 2: VDD = 90 V, Tch = 25°C, L = 4.39 mH, IAR = 10 A, RG = 25 Ω Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Please handle with caution. 1 2007-04-10 2SK4112 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Gate-source breakdown voltage Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge Gate-source charge Gate-drain charge Symbol Test Condition Min Typ. Max Unit IGSS V (BR) GSS IDSS V (BR) DSS Vth RDS (ON) ⎪Yfs⎪ Ciss Crss Coss tr ton VGS = ±25 V, VDS = 0 V IG =±10 µA, VDS = 0 V VDS = 600 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 4 A VDS = 10 V, ID = 4 A VDS = 25 V, VGS = 0 V, f = 1 MHz 10 V VGS 0V 50 Ω ID = 4 A VOUT RL = 50 Ω ⎯ ±30 ⎯ 600 2.0 ⎯ 1.5 ⎯ ⎯ ⎯ ⎯ ⎯ tf ⎯ VDD ∼− 200 V toff Duty <= 1%, tw = 10 µs ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 0.75 5.5 1300 12 120 20 50 35 150 ±10 ⎯ 100 ⎯ 4.0 1.0 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ µA V µA V V Ω S pF ns Qg Qgs VDD ∼− 400 V, VGS = 10 V, ID = 10 A Qgd ⎯ 33 ⎯ ⎯ 18 ⎯ nC ⎯ 15 ⎯ Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Continuous drain reverse current (Note 1) Pulse drain reverse current (Note 1) Forward voltage (diode) Reverse recovery time Reverse recovery charge Symbol IDR IDRP VDSF trr Qrr Test Condition ⎯ ⎯ IDR = 10 A, VGS = 0 V IDR = 10 A, VGS = 0 V, dIDR/dt = 100 A/µs Min Typ. Max Unit ⎯ ⎯ 10 A ⎯ ⎯ 30 A ⎯ ⎯ −1.7 V ⎯ 1500 ⎯ ns ⎯ 19 ⎯ µC Marking K4112 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2007-04-10 DRAIN CURRENT ID (A) ID – VDS 10 10,8 6 COMMON SOURCE Tc = 25°C 8 5.5 PULSE TEST 5.25 6 5 4 4.75 2 4.5 VGS = 4V 0 0 4 8 12 16 20 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN CURRENT ID (A) 2SK4112 ID – VDS 20 10 COMMON SOURCE 8 Tc = 25°C PULSE TEST 16 6 12 5.5 8 5.25 5 4 4.75 4.5 VGS = 4 V 0 0 10 20 30 40 50 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN CURRENT ID (A) ID – VGS 20 COMMON SOURCE 16 VDS = 20 V PULSE TEST 12 8 Tc = −55°C 100 4 25 0 0 246 8 GATE-SOURCE VOLTAGE VGS 10 (V) DRAIN-SOURCE VOLTAGE VDS (V) VDS – VGS 10 8 ID = 10 A 6 COMMON SOURCE Tc = 25 PULSE TEST 4 5 2 2.5 0 0 4 8 12 GATE-SOURCE VOLTAGE 16 VGS 20 (V) FORWARD TRANSFER ADMITTANCE ⎪Yfs⎪ (S) ⎪Yfs⎪ – ID 100 10 1 0.1 0.1 Tc = −55°C 25 100 COMMON SOURCE VDS = 20 V PULSE TEST 1 10 100 DRAIN CURRENT ID (A) DRAIN-SOURCE ON RESISTANCE RDS (ON) (Ω) RDS (ON) – ID 10 COMMON SOURCE Tc = 25°C PULSE TEST 1 VGS = 10 V 15V 0.1 0.1 1 10 DRAIN CURRENT ID (A) 100 3 2007-04-10 DRAIN-SOURCE ON RESISTANCE RDS (ON) ( Ω) RDS (ON) – Tc 4 COMMON SOURCE VGS = 10 V PULSE TEST 3 2 ID = 7.5A 4 12 0 −80 −40 0 40 80 120 160 CASE TEMPERATURE Tc (°C) DRAIN REVERSE CURRENT IDR (A) 2SK4112 IDR – VDS 100 COMMON SOURCE Tc = 25°C PULSE TEST 10 1 10 5 31 VGS = 0, −1 V 0.1 0 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 DRAIN-SOURCE VOLTAGE VDS (V) CAPACITANCE C (pF) 10000 1000 100 CAPACITANCE – VDS Ciss Coss 10 COMMO.


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