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FMSK20200C-D2G Dataheets PDF



Part Number FMSK20200C-D2G
Manufacturers American First Semiconductor
Logo American First Semiconductor
Description (FMSK2020C-D2G - FMSK20200C-D2G) Schottky Barrier Rectifier
Datasheet FMSK20200C-D2G DatasheetFMSK20200C-D2G Datasheet (PDF)

FMSK2020C-D2G THRU FMSK20200C-D2G Schottky Barrier Rectifier(Single Chip) Reverse Voltage: 20 to 200 Volts Forward Current: 20.0 Ampere Features • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Metal silicon junction, majority carrier conduction • Guard ring for overvoltage protection • Low power loss, high efficiency • High current capability, Low forward voltage drop • Single rectifier construction • High surge capability • For use in low voltage, high frequen.

  FMSK20200C-D2G   FMSK20200C-D2G


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FMSK2020C-D2G THRU FMSK20200C-D2G Schottky Barrier Rectifier(Single Chip) Reverse Voltage: 20 to 200 Volts Forward Current: 20.0 Ampere Features • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Metal silicon junction, majority carrier conduction • Guard ring for overvoltage protection • Low power loss, high efficiency • High current capability, Low forward voltage drop • Single rectifier construction • High surge capability • For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications • High temperature soldering guaranteed: 260 C/10 seconds, 0.25"(6.35mm)from case • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Package outline TO-263 0.420(10.67) 0.380(9.65) 0.245(6.22) MIN 0.360(9.14) 0.320(8.13) 1K 2 0.190(4.83) 0.160(4.06) 0.055(1.40) 0.045(1.14) 0.066(1.68) 0.036(0.92) 0.639(16.22) 0.560(14.22) 0.053(1.34) 0.047(1.20) 0.095(2.41) 0.083(2.10) 0.131(3.32) 0.090(2.29) 0.037(0.94) 0.027(0.69) 0.134(3.40) 0.105(2.67) 0.018(0.46) 0.014(0.35) Mechanical data • Case: JEDEC TO-263 molded plastic body • Terminals: Solderable per MIL-STD-202, Method 208 • Polarity: As marked • Mounting Position: Any • Weight: 0.08 ounce, 2.24 gram Dimensions in inches and (millimeters) Maximum Ratings And Electrical Characteristics • Ratings at 25 C ambient temperature unless otherwise specified. • Single phase, half wave, resistive or inductive load. • For capacitive load, derate by 20%. Type Number Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current See Fig.1 Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC method) Maximum instantaneous forward voltage at 20.0 A Maximum instantaneous reverse current at rated DC blocking voltage(Note 1) T C =25 C TC =125 C Typical thermal resistance (Note 2) Operating junction temperature range Storage temperature range Symbols VRRM VRMS VDC I(AV) IFSM VF IR R JC TJ TSTG FMSK FMSK FMSK FMSK FMSK FMSK FMSK FMSK FMSK 2020 2040 2045 2050 2060 2080 20100 20150 20200 C-D2G C-D2G C-D2G C-D2G C-D2G C-D2G C-D2G C-D2G C-D2G 20 40 45 50 60 80 100 150 200 14 28 31ㄅ.5 35 42 56 70 105 140 20 40 45 50 60 80 100 150 200 20.0 200.0 0.60 30 0.75 0.2 3.0 -65 to+150 -65 to+150 0.85 50 0.90 0.95 Notes: 1.Pulse test: 300 s pulse width,1% duty cycle 2.Thermal resistance from junction to case Units Volts Volts Volts Amps Amps Volts mA C/W C C @ 2010 Copyright By American First Semiconductor Page 1/2 FMSK2020C-D2G THRU FMSK20200C-D2G Rating and characteristic curves FIG.1-FORWARD CURRENT DERATING CURVE AVERAGE FORWARD CURRENT AMPERES 20 16 12 8 INDUCTIVE OR 4 RESISTIVE LOAD 0 0 50 100 LEAD TEMPERATURE ( C) 150 FIG.3-TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 50 TJ=125 C 10 PULSE WIDTH=300 S 1% DUTY CYCLE TJ=25 C 1 INSTANTANEOUS FORWARD CURRENT( AMPERES) 0.1 0.01 0 0.1 0.2 0.3 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 INSTANTANEOUS FORWARD VOLTAGE (VOLTS) FIG.5-TYPICAL JUNCTION CAPACITANCE INSTANTANEOUS REVERSE CURRENT (mA) PEAK FORWARD SURGE CURRENT(AMPERES) FIG.2-MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 200 180 160 TJ=TJMAX 140 8.3ms SINGLE HALF SINE-WAVE (JEDEC Method) 120 100 80 1 10 100 NUMBER OF CYCLES AT 60Hz FIG.4-TYPICAL REVERSE CHARACTERISTICS 50 10 TJ=125 C 1 TJ=75 C 0.1 0.01 TJ=25 C 0.001 0 20 40 60 80 100 PERCENT OF RATED PEAK REVERSE VOLTAGE% FIG.6-TYPICAL TRANSIENT THERMAL IMPEDANCE 4000 1000 TJ=25 C f=1.0MHZ Vsig=50mVp-p 100 10 TRANSIENT THERMAL IMPEDANCE, C/ W JUNCTION CAPACITANCE(pF) 100 0.1 1 10 REVERSE VOLTAGE. VOLTS 100 1 0.1 0.01 0.1 1 10 T, PULSE DURATION ,sec. 100 www.First-semi.com Page 2/2 .


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