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FMSK1660C-D2G Dataheets PDF



Part Number FMSK1660C-D2G
Manufacturers American First Semiconductor
Logo American First Semiconductor
Description (FMSK1620C-D2G - FMSK16200C-D2G) Schottky Barrier Rectifier
Datasheet FMSK1660C-D2G DatasheetFMSK1660C-D2G Datasheet (PDF)

Schottky Barrier Rectifier FMSK1620C-D2G THRU FMSK16200C-D2G Reverse Voltage: 20 to 200 Volts Forward Current: 16.0 Ampere Features • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Metal silicon junction, majority carrier conduction • Guard ring for overvoltage protection • Low power loss, high efficiency • High current capability, Low forward voltage drop • Single rectifier construction • High surge capability • For use in low voltage, high frequency inverters.

  FMSK1660C-D2G   FMSK1660C-D2G



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Schottky Barrier Rectifier FMSK1620C-D2G THRU FMSK16200C-D2G Reverse Voltage: 20 to 200 Volts Forward Current: 16.0 Ampere Features • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Metal silicon junction, majority carrier conduction • Guard ring for overvoltage protection • Low power loss, high efficiency • High current capability, Low forward voltage drop • Single rectifier construction • High surge capability • For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications • High temperature soldering guaranteed: 260 C/10 seconds, 0.25"(6.35mm)from case • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Package outline TO-263 0.420(10.67) 0.380(9.65) 0.245(6.22) MIN 0.360(9.14) 0.320(8.13) 1K 2 0.190(4.83) 0.160(4.06) 0.055(1.40) 0.045(1.14) 0.066(1.68) 0.036(0.92) 0.639(16.22) 0.560(14.22) 0.053(1.34) 0.047(1.20) 0.095(2.41) 0.083(2.10) 0.131(3.32) 0.090(2.29) 0.037(0.94) 0.027(0.69) 0.134(3.40) 0.105(2.67) 0.018(0.46) 0.014(0.35) Mechanical data • Case: JEDEC TO-263 molded plastic body • Terminals: Solderable per MIL-STD-202, Method 208 • Polarity: As marked • Mounting Position: Any • Weight: 0.08 ounce, 2.24 gram Dimensions in inches and (millimeters) Maximum Ratings And Electrical Characteristics • Ratings at 25 C ambient temperature unless otherwise specified. • Single phase, half wave, resistive or inductive load. • For capacitive load, derate by 20%. Type Number Symbols Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current(see Fig.1) Per leg Total device Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC method) Maximum instantaneous forward voltage at 16.0 A Maximum instantaneous reverse current at rated DC blocking voltage(Note 1) T C =25 C TC =125 C Typical thermal resistance (Note 2) Operating junction temperature range Storage temperature range VRRM VRMS VDC I(AV) IFSM VF IR R JC TJ TSTG FMSK FMSK FMSK FMSK FMSK FMSK FMSK FMSK FMSK 1620 1640 1645 1650 1660 1680 16100 16150 16200 C-D2G C-D2G C-D2G C-D2G C-D2G C-D2G C-D2G C-D2G C-D2G 20 40 45 50 60 80 100 150 200 14 28 31ㄅ.5 35 42 56 70 105 140 20 40 45 50 60 80 100 150 200 8.0 16.0 200.0 0.60 30 0.75 0.2 3.0 -65 to+150 -65 to+150 0.85 50 0.90 0.95 Units Volts Volts Volts Amps Amps Volts mA C/W C C Notes: 1.Pulse test: 300 s pulse width,1% duty cycle 2.Thermal resistance from junction to case @ 2010 Copyright By American First Semiconductor Page 1/2 FMSK1620C-D2G THRU FMSK16200C-D2G Rating and characteristic curves FIG.1-FORWARD CURRENT DERATING CURVE AVERAGE FORWARD CURRENT (AMPERES) 20 16 12 8 SINGLE PHASE 4 HALF WAVE 50Hz INDUCTIVE OR RESISTIVE LOAD 0 0 50 100 LEAD TEMPERATURE ( C) 150 FIG.4-TYPICAL JUNCTION CAPACITANCE 4000 2000 1000 CAPACITANCE(pF) 200 100 0.1 0.4 1.0 10 REVERSE VOLTAGE (VOLTS) 40 60 100 INSTANTANE.


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