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MBR320NG Dataheets PDF



Part Number MBR320NG
Manufacturers American First Semiconductor
Logo American First Semiconductor
Description 3.0A Leaded Type Schottky Barrier Rectifiers
Datasheet MBR320NG DatasheetMBR320NG Datasheet (PDF)

Schottky Barrier Rectifier MBR320NG THRU MBR3100NG 3.0A Leaded Type Schottky Barrier Rectifiers - 20V-200V Features • Axial lead type devices for through hole design. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of MIL-STD-19500 /228 • Suffix "-H" indicate.

  MBR320NG   MBR320NG


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Schottky Barrier Rectifier MBR320NG THRU MBR3100NG 3.0A Leaded Type Schottky Barrier Rectifiers - 20V-200V Features • Axial lead type devices for through hole design. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of MIL-STD-19500 /228 • Suffix "-H" indicates Halogen free parts, ex. MBR320NG-H. Package outline DO-201AD .220(5.6) .197(5.0) DIA. 1.0(25.4) MIN. .375(9.5) .285(7.2) Mechanical data • Epoxy:UL94-V0 rated flame retardant • Case : Molded plastic, DO-201AD • Terminals : Solder plated, solderable per MIL-STD-202, Method 208 guranteed • Polarity :Color band denotes cathode end • Mounting Position : Any • Weight :Approximated 1.10 gram .052(1.3) .048(1.2) DIA. 1.0(25.4) MIN. Dimensions in inches and (millimeters) Maximum ratings (AT TA=25oC unless otherwise noted) PARAMETER CONDITIONS Forward rectified current See Fig.2 Forward surge current Reverse current Thermal resistance Diode junction capacitance Storage temperature 8.3ms single half sine-wave superimposed on rate load (JEDEC methode) VR = VRRM TJ = 25OC VR = VRRM TJ = 100OC Junction to ambient f=1MHz and applied 4V DC reverse voltage Symbol MIN. TYP. MAX. UNIT IO 3.0 A IFSM 80 A IR RθJA CJ TSTG 0.5 mA 30 20 OC/W 250 pF -65 +175 OC SYMBOLS MBR320NG MBR330NG MBR340NG MBR350NG MBR360NG MBR380NG MBR3100NG MBR3150NG MBR3200NG V RR * M 1 (V) 20 30 40 50 60 80 100 150 200 V * RMS 2 (V) 14 21 28 35 42 56 70 105 140 V * R 3 (V) 20 30 40 50 60 80 100 150 200 V * F 4 (V) Operating temperature TJ, (OC) 0.55 -55 to +125 0.70 0.85 0.90 0.95 -55 to +150 *1 Repetitive peak reverse voltage *2 RMS voltage *3 Continuous reverse voltage *4 Maximum forward voltage@IF=3.0A @ 2010 Copyright By American First Semiconductor Page 1/2 AVERAGE FORWARD CURRENT,(A) PEAK FORWAARD SURGE CURRENT,(A) MBR320NG THRU MBR3100NG Rating and characteristic curves FIG.1-TYPICAL FORWARD CURRENT DERATING CURVE 3.0 2.5 2.0 1.5 1.0 0.5 0 0 MBR350NG~MBR3200NG MBR320NG~MBR340NG 20 40 60 80 100 120 140 160 180 200 LEAD TEMPERATURE,( C) FIG.3-MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 100 80 60 TJ=25 C 8.3ms Single Half 40 Sine Wave JEDEC method 20 0 1 5 10 50 100 NUMBER OF CYCLES AT 60Hz 700 600 500 400 300 200 100 0 .01 FIG.4-TYPICAL JUNCTION CAPACITANCE .05 .1 .5 1 5 10 REVERSE VOLTAGE,(V) 50 100 REVERSE LEAKAGE CURRENT, (mA) INSTANTANEOUS FORWARD CURRENT,(A) 20~40V 50~60V 1508V0~100V 200V FIG.2-TYPICAL FORWARD CHARACTERISTICS 10 3.0 1.0 o TJ=25 C Pulse Width 300us 1% Duty Cycle 0.1 .01 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 FORWARD VOLTAGE,(V) FIG.5 - TYPICAL REVERSE CHARACTERISTICS 100 10 1.0 .1 TJ=75 C TJ=25 C .01 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE,(%) JUNCTION CAPACITANCE,(pF) www.First-semi.com Page 2/2 .


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