Document
Schottky Barrier Rectifier
MBR120TG THRU MBR1200TG
Reverse Voltage: 20 to 200 Volts Forward Current: 1.0 Ampere
Package outline
Features
• Plastic package has Underwriters Laboratory Flammability Classification 94V-0
• Metal silicon junction, majority carrier conduction • Low power loss, high efficiency • High current capability, Low forward voltage drop • High surge capability • For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications • High temperature soldering guaranteed:
260 C/10 seconds at terminals • Component in accordance to RoHS 2002/95/EC and
WEEE 2002/96/EC
Mechanical data
• Case: R-1 molded plastic body • Terminals: Plated axial leads, solderable per MIL-STD-750,
Method 2026 • Polarity: Color band denotes cathode end • Mounting Position: Any • Weight: 0.007 ounce, 0.20 gram
R-1
0.102(2.6)
0.091(2.3) DIA.
0.787(20.0) MIN.
0.126(3.2) 0.106(2.7)
0.025(0.65) 0.021(0.55)
DIA.
0.787(20.0) MIN.
Dimensions in inches and (millimeters)
Maximum Ratings And Electrical Characteristics
• Ratings at 25 C ambient temperature unless otherwise specified. • Single phase, half wave, resistive or inductive load. • For capacitive load derate by 20%.
Type Number
Maximum repetitive peak reverse voltage Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current 0.375"(9.5mm) lead length(see Fig. 1 )
Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC method)
Maximum instantaneous forward voltage at 1.0 A(Note 1 )
Maximum instantaneous reverse current at rated DC blocking voltage(Note 1)
TA =25 C TA =100 C
Typical junction capacitance(Note 3)
Typical thermal resistance(Note 2)
Symbols
VRRM VRMS VDC I(AV)
IFSM
VF
IR CJ R JA
MBR 120 TG
20
14
20
MBR 130 TG
30
21
30
MBR 140 TG
40
28
40
MBR 150 TG
50
35
50
MBR 160 TG
60
42
60
MBR 180 TG
80
57
80
1.0
MBR 1100 TG
100
71
100
40.0
0.55 0.70 0.85 0.2 10 110
50.0
Operating junction temperature range Storage temperature range
TJ TSTG
-65 to+150 -65 to+150
Notes: 1.Pulse test: 300 s pulse width,1% duty cycle 2.Thermal resistance (from junction to ambient)Vertical P.C.B. mounted , 0.5"(12.7mm)lead length 3.Measured at 1.0MHz and reverse voltage of 4.0 volts
MBR 1150 TG 150 105 150
0.90
MBR 1200 TG 200 140 200
0.95
Units
Volts Volts Volts Amp
Amps
Volts
mA PF
C/W C C
@ 2010 Copyright By American First Semiconductor
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INSTANTANEOUS FORWARD CURRENT( AMPERES)
MBR120TG THRU MBR1200TG
Rating and characteristic curves
FIG.1-FOWARD CURRENT DERATING CURVE
AVERAGE FORWARD CURRENT AMPERES
1 0.75
0.5
0.25
RESISTIVE OR INDUCTIVE LOAD 0.375" (9.5mm) LEAD LENGTH
0 0 25 50 75 100
125 150
175
LEAD TEMPERATURE ( C)
FIG.3-TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS
PEAK FORWARD SURGE CURRENT(AMPERES)
FIG.2-MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT
50 TJ=TJMAX
40 8.3ms SINGLE HALF SINE-WAVE (JEDEC Method)
30
20
10
0 1 10 100
NUMBER OF CYCLES AT 60Hz
FIG.4-TYPICAL REVERSE CHARACTERISTICS
50 100
INSTANTANEOUS REVERSE CURRENT (mA)
10 TJ=125 C
TJ=150 C
1
PULSE WIDTH=300 S 1% DUTY CYCLE
0.1 TJ=25 C
0.01 0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
FIG.5-TYPICAL JUNCTION CAPACITANCE
400
TJ=25 C f=1.0MHZ Vsig=50mVp-p 100
10
TJ=125 C 1.0
0.1 TJ=100 C
0.01
TJ=25 C
0.001 0
20 40
60 80 100
PERCENT OF RATED PEAK REVERSE VOLTAGE%
FIG.6-TYPICAL TRANSIENT THERMAL IMPEDANCE
100
10
1
TRANSIENT THERMAL IMPEDANCE, C/ W
JUNCTION CAPACITANCE(pF)
10 0.1
1 10 REVERSE VOLTAGE. VOLTS
100
0.1 0.01
0.1 1 10 T, PULSE DURATION ,sec.
100
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