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FFM306G Dataheets PDF



Part Number FFM306G
Manufacturers American First Semiconductor
Logo American First Semiconductor
Description (FFM301G - FFM307G) 3.0A Surface Mount Fast Recovery Rectifiers
Datasheet FFM306G DatasheetFFM306G Datasheet (PDF)

Chip Silicon Rectifier 3.0A Surface Mount Fast Recovery Rectifiers-50-1000V Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. • Low profile surface mounted application in order to optimize board space. • High current capability. • Fast switching for high efficiency. • High surge current capability. • Glass passivated chip junction. • Lead- free parts meet RoHS requirments. • Suffix "-H" indicates Halogen-free parts, ex. FFM.

  FFM306G   FFM306G


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Chip Silicon Rectifier 3.0A Surface Mount Fast Recovery Rectifiers-50-1000V Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. • Low profile surface mounted application in order to optimize board space. • High current capability. • Fast switching for high efficiency. • High surge current capability. • Glass passivated chip junction. • Lead- free parts meet RoHS requirments. • Suffix "-H" indicates Halogen-free parts, ex. FFM301-MG-H. Mechanical data • Epoxy: UL94-V0 rated frame retardant • Case: Molded plastic, DO-214AB / SMC • Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 • Polarity: lndicated by cathode band • Mounting Position: Any • Weight: Approximated 0.19 gram FFM301G THRU FFM307G Package outline SMC 0.272(6.9) 0.248(6.3) 0.012(0.3) Typ. 0.189(4.8) 0.165(4.2) 0.048(1.2) Typ. 0.098(2.5) 0.075(1.9) 0.048 (1.2) Typ. Dimensions in inches and (millimeters) Maximum ratings (AT TA=25oC unless otherwise noted) PARAMETER Forward rectified current CONDITIONS Ambient temperature = 55oC Forward surge current Reverse current Thermal resistance Diode junction capacitance Storage temperature 8.3ms single half sine-wave superimposed on rate load (JEDEC methode) VR = VRRM TJ = 25OC VR = VRRM TJ = 100OC Junction to ambient f=1MHz and applied 4V DC reverse voltage Symbol IO IFSM MIN. TYP. MAX. UNIT 3.0 A 100 A 5.0 IR μA 300 RθJA CJ 50 OC/W 60 pF TSTG -65 +175 OC SYMBOLS V R * RM 1 (V) V * RMS 2 (V) V * R 3 (V) V * F 4 (V) T * RR 5 (nS) FFM301G FFM302G FFM303G FFM304G 50 100 200 400 35 50 70 100 140 200 280 400 1.30 150 FFM305G FFM306G FFM307G 600 800 1000 420 560 700 600 800 1000 250 500 Note 1. Reverse recovery time test condition, IF=0.5A, IR=1.0A, IRR=0.25A Operating temperature TJ, (OC) -55 to +150 *1 Repetitive peak reverse voltage *2 RMS voltage *3 Continuous reverse voltage *4 Maximum forward voltage@IF=3.0A *5 Maximum Reverse recovery time, note 1 @ 2010 Copyright By American First Semiconductor Page 1/2 INSTANTANEOUS FORWARD CURRENT,(A) FFM301G THRU FFM307G Rating and characteristic curves FIG.1-TYPICAL FORWARD CHARACTERISTICS 50 10 3.0 1.0 0.1 TJ=25 C Pulse Width 300us 1% Duty Cycle .01 .6 .8 1.0 1.2 1.4 1.6 1.8 2.0 FORWARD VOLTAGE,(V) FIG.3- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTICS 50W NONINDUCTIVE 10W NONINDUCTIVE (+) 25Vdc (approx.) () D.U.T. 1W NONINDUCTIVE OSCILLISCOPE (NOTE 1) () PULSE GENERATOR (NOTE 2) (+) NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF. 2. Rise Time= 10ns max., Source Impedance= 50 ohms. +0.5A 0 -0.25A trr | | | | | | | | -1.0A 1cm SET TIME BASE FOR 50 / 10ns / cm JUNCTION CAPACITANCE,(pF) AVERAGE FORWARD CURRENT,(A) PEAK FORWAARD SURGE CURRENT,(A) FIG.2-TYPICAL FORWARD CURRENT DERATING CURVE 3.6 3.0 2.4 1.8 1.2 0.6 0 0 Single Phase Half Wave 60Hz Resistive Or Inductive Load 20 40 60 80 100 120 140 160 180 200 AMBIENT TEMPERATURE ( C) FIG.4-MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 100 80 60 TJ=25 C 8.3ms Single Half 40 Sine Wave JEDEC method 20 0 1 5 10 50 100 NUMBER OF CYCLES AT 60Hz 70 60 50 40 30 20 10 0 .01 FIG.5-TYPICAL JUNCTION CAPACITANCE .05 .1 .5 1 5 10 REVERSE VOLTAGE,(V) 50 100 www.First-semi.com Page 2/2 .


FFM305G FFM306G FFM307G


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