Document
Chip Silicon Rectifier
3.0A Surface Mount Fast Recovery Rectifiers-50-1000V
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
optimize board space.
• High current capability. • Fast switching for high efficiency. • High surge current capability. • Glass passivated chip junction. • Lead- free parts meet RoHS requirments. • Suffix "-H" indicates Halogen-free parts, ex. FFM301-MG-H.
Mechanical data
• Epoxy: UL94-V0 rated frame retardant • Case: Molded plastic, DO-214AB / SMC • Terminals: Solder plated, solderable per MIL-STD-750,
Method 2026
• Polarity: lndicated by cathode band • Mounting Position: Any • Weight: Approximated 0.19 gram
FFM301G THRU FFM307G
Package outline SMC
0.272(6.9) 0.248(6.3)
0.012(0.3) Typ.
0.189(4.8) 0.165(4.2)
0.048(1.2) Typ.
0.098(2.5) 0.075(1.9)
0.048 (1.2) Typ.
Dimensions in inches and (millimeters)
Maximum ratings (AT TA=25oC unless otherwise noted)
PARAMETER Forward rectified current
CONDITIONS Ambient temperature = 55oC
Forward surge current
Reverse current Thermal resistance Diode junction capacitance Storage temperature
8.3ms single half sine-wave superimposed on rate load (JEDEC methode)
VR = VRRM TJ = 25OC VR = VRRM TJ = 100OC Junction to ambient
f=1MHz and applied 4V DC reverse voltage
Symbol IO
IFSM
MIN.
TYP.
MAX. UNIT 3.0 A
100 A
5.0
IR
μA 300
RθJA CJ
50 OC/W 60 pF
TSTG
-65
+175 OC
SYMBOLS
V
R
*
RM
1
(V)
V
*
RMS
2
(V)
V
*
R
3
(V)
V
*
F
4
(V)
T
*
RR
5
(nS)
FFM301G FFM302G FFM303G FFM304G
50 100 200 400
35 50 70 100 140 200 280 400
1.30
150
FFM305G FFM306G FFM307G
600 800 1000
420 560 700
600 800 1000
250 500
Note 1. Reverse recovery time test condition, IF=0.5A, IR=1.0A, IRR=0.25A
Operating temperature
TJ, (OC)
-55 to +150
*1 Repetitive peak reverse voltage *2 RMS voltage *3 Continuous reverse voltage *4 Maximum forward voltage@IF=3.0A *5 Maximum Reverse recovery time, note 1
@ 2010 Copyright By American First Semiconductor
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INSTANTANEOUS FORWARD CURRENT,(A)
FFM301G THRU FFM307G
Rating and characteristic curves
FIG.1-TYPICAL FORWARD CHARACTERISTICS
50
10 3.0 1.0
0.1
TJ=25 C
Pulse Width 300us 1% Duty Cycle
.01 .6
.8 1.0 1.2 1.4 1.6 1.8 2.0
FORWARD VOLTAGE,(V)
FIG.3- TEST CIRCUIT DIAGRAM AND REVERSE
RECOVERY TIME CHARACTERISTICS
50W NONINDUCTIVE
10W NONINDUCTIVE
(+)
25Vdc (approx.)
()
D.U.T.
1W NONINDUCTIVE
OSCILLISCOPE (NOTE 1)
()
PULSE GENERATOR
(NOTE 2)
(+)
NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF. 2. Rise Time= 10ns max., Source Impedance= 50 ohms.
+0.5A
0 -0.25A
trr
| | | | | | | |
-1.0A
1cm SET TIME BASE FOR
50 / 10ns / cm
JUNCTION CAPACITANCE,(pF)
AVERAGE FORWARD CURRENT,(A)
PEAK FORWAARD SURGE CURRENT,(A)
FIG.2-TYPICAL FORWARD CURRENT DERATING CURVE
3.6 3.0 2.4 1.8
1.2
0.6 0 0
Single Phase Half Wave 60Hz Resistive Or Inductive Load
20 40
60 80 100 120 140 160 180 200
AMBIENT TEMPERATURE ( C)
FIG.4-MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
100
80
60
TJ=25 C
8.3ms Single Half
40 Sine Wave
JEDEC method
20
0
1
5 10
50 100
NUMBER OF CYCLES AT 60Hz
70 60 50 40 30 20 10
0 .01
FIG.5-TYPICAL JUNCTION CAPACITANCE
.05 .1
.5 1
5 10
REVERSE VOLTAGE,(V)
50 100
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