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FFM302G

American First Semiconductor

(FFM301G - FFM307G) 3.0A Surface Mount Fast Recovery Rectifiers

Chip Silicon Rectifier 3.0A Surface Mount Fast Recovery Rectifiers-50-1000V Features • Batch process design, excellent p...


American First Semiconductor

FFM302G

File Download Download FFM302G Datasheet


Description
Chip Silicon Rectifier 3.0A Surface Mount Fast Recovery Rectifiers-50-1000V Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. Low profile surface mounted application in order to optimize board space. High current capability. Fast switching for high efficiency. High surge current capability. Glass passivated chip junction. Lead- free parts meet RoHS requirments. Suffix "-H" indicates Halogen-free parts, ex. FFM301-MG-H. Mechanical data Epoxy: UL94-V0 rated frame retardant Case: Molded plastic, DO-214AB / SMC Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 Polarity: lndicated by cathode band Mounting Position: Any Weight: Approximated 0.19 gram FFM301G THRU FFM307G Package outline SMC 0.272(6.9) 0.248(6.3) 0.012(0.3) Typ. 0.189(4.8) 0.165(4.2) 0.048(1.2) Typ. 0.098(2.5) 0.075(1.9) 0.048 (1.2) Typ. Dimensions in inches and (millimeters) Maximum ratings (AT TA=25oC unless otherwise noted) PARAMETER Forward rectified current CONDITIONS Ambient temperature = 55oC Forward surge current Reverse current Thermal resistance Diode junction capacitance Storage temperature 8.3ms single half sine-wave superimposed on rate load (JEDEC methode) VR = VRRM TJ = 25OC VR = VRRM TJ = 100OC Junction to ambient f=1MHz and applied 4V DC reverse voltage Symbol IO IFSM MIN. TYP. MAX. UNIT 3.0 A 100 A 5.0 IR μA 300 RθJA CJ 50 OC/W 60 pF TSTG -65 +175 OC SYMBOLS V...




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