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FFM102G Dataheets PDF



Part Number FFM102G
Manufacturers American First Semiconductor
Logo American First Semiconductor
Description (FFM101G - FFM107G) 1.0A Surface Mount Fast Recovery Rectifiers
Datasheet FFM102G DatasheetFFM102G Datasheet (PDF)

Chip Silicon Rectifier FFM101G THRU FFM107G 1.0A Surface Mount Fast Recovery Rectifiers-50-1000V Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. • Low profile surface mounted application in order to optimize board space. • High current capability. • Fast switching for high efficiency. • High surge current capability. • Glass passivated chip junction. • Lead-free parts meet RoHS requirments. • Suffix "-H" indicates Halog.

  FFM102G   FFM102G



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Chip Silicon Rectifier FFM101G THRU FFM107G 1.0A Surface Mount Fast Recovery Rectifiers-50-1000V Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. • Low profile surface mounted application in order to optimize board space. • High current capability. • Fast switching for high efficiency. • High surge current capability. • Glass passivated chip junction. • Lead-free parts meet RoHS requirments. • Suffix "-H" indicates Halogen-free parts, ex. FFM101G-H. Mechanical data • Epoxy:UL94-V0 rated flame retardant • Case : Molded plastic, JEDEC DO-214AC / SMA • Terminals : Solder plated, solderable per MIL-STD-750, Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.05 gram Package outline SMA 0.196(4.9) 0.180(4.5) 0.012(0.3) Typ. 0.106(2.7) 0.091(2.3) 0.032(0.8) Typ. 0.068(1.7) 0.060(1.5) 0.032 (0.8) Typ. Dimensions in inches and (millimeters) Maximum ratings (AT TA=25oC unless otherwise noted) PARAMETER CONDITIONS Forward rectified current Ambient temperature = 75oC Forward surge current Reverse current Thermal resistance Diode junction capacitance Storage temperature 8.3ms single half sine-wave superimposed on rate load (JEDEC methode) VR = VRRM TJ = 25OC VR = VRRM TJ = 100OC Junction to ambient f=1MHz and applied 4V DC reverse voltage Symbol MIN. TYP. MAX. UNIT IO 1.0 A IFSM 30 A 5.0 IR μA 100 RθJA 42 OC/W CJ 15 pF TSTG -65 +175 OC SYMBOLS V * RRM 1 (V) V * RMS 2 (V) V * R 3 (V) V * F 4 (V) T * RR 5 (nS) FFM101G FFM102G FFM103G FFM104G 50 100 200 400 35 50 70 100 140 200 280 400 1.30 150 FFM105G FFM106G FFM107G 600 800 1000 420 560 700 600 800 1000 250 500 Note 1. Reverse recovery time test condition, IF=0.5A, IR=1.0A, IRR=0.25A Operating temperature TJ, (OC) -55 to +150 *1 Repetitive peak reverse voltage *2 RMS voltage *3 Continuous reverse voltage *4 Maximum forward voltage@IF=1.0A *5 Maximum Reverse recovery time, note 1 @ 2010 Copyright By American First Semiconductor Page 1/2 INSTANTANEOUS FORWARD CURRENT,(A) FFM101G THRU FFM107G Rating and characteristic curves FIG.1-TYPICAL FORWARD CHARACTERISTICS 50 10 3.0 1.0 0.1 TJ=25 C Pulse Width 300us 1% Duty Cycle .01 .6 .8 1.0 1.2 1.4 1.6 1.8 2.0 FORWARD VOLTAGE,(V) FIG.3- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTICS 50Ω NONINDUCTIVE 10Ω NONINDUCTIVE (+) 25Vdc (approx.) () D.U.T. 1Ω NONINDUCTIVE OSCILLISCOPE (NOTE 1) () PULSE GENERATOR (NOTE 2) (+) NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF. 2. Rise Time= 10ns max., Source Impedance= 50 ohms. +0.5A 0 -0.25A trr | | | | | | | | -1.0A 1cm SET TIME BASE FOR 50 / 10ns / cm JUNCTION CAPACITANCE,(pF) AVERAGE FORWARD CURRENT,(A) PEAK FORWAARD SURGE CURRENT,(A) FIG.2-TYPICAL FORWARD CURRENT DERATING CURVE 1.2 1.0 0.8 0.6 0.4 0.2 0 0 Single Phase Half Wave 60Hz Resistive Or Inductive Load 20 40 60 80 100 120 140 160 .


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