Document
Chip Silicon Rectifier
FM4001G THRU FM4007G
1.0A Surface Mount General Purpose Rectifiers - 50V-1000V
Features
• Batch process design, excellent power dissipation offers. better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to optimize board space.
• High current capability. • High surge capability. • Glass passivated chip junction. • Lead-free parts meet environmental standards of
MIL-STD-19500 /228 • Suffix "-H" indicates Halogen-free parts, ex. FM4001G-H.
Mechanical data
• Epoxy: UL94-V0 rated flame retardant • Case : Molded plastic, DO-214AC / SMA • Terminals : Solder plated, solderable per MIL-STD-750,
Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight :Approximated 0.05 gram
Package outline SMA
0.196(4.9) 0.180(4.5)
0.012(0.3) Typ.
0.106(2.7) 0.091(2.3)
0.032(0.8) Typ.
0.068(1.7) 0.060(1.5)
0.032 (0.8) Typ.
Dimensions in inches and (millimeters)
Maximum ratings (AT T =25oC unless otherwise noted)
PARAMETER Forward rectified current
See Fig.2
CONDITIONS
Forward surge current
Reverse current Thermal resistance Diode junction capacitance Storage temperature
8.3ms single half sine-wave superimposed on rate load (JEDEC methode)
VR = VRRM TJ = 25OC VR = VRRM TJ = 100OC Junction to ambient Junction to case
f=1MHz and applied 4V DC reverse voltage
Symbol MIN. TYP. MAX. UNIT IO 1.0 A
IFSM 30 A
5.0
IR
μA 50
RθJA RθJC
50 OC/W
28
CJ 15 pF
TSTG
-65
+175 OC
SYMBOLS
FM4001G FM4002G FM4003G FM4004G FM4005G FM4006G FM4007G
V
*
RRM
1
(V)
50 100 200
400
600 800
1000
V
*
RMS
2
(V)
35
70 140
280
420
560
700
V
*
R
3
(V)
50 100 200 400
600 800
1000
V
*
F
4
(V)
Operating temperature
TJ, (OC)
1.10 -55 to +150
*1 Repetitive peak reverse voltage *2 RMS voltage *3 Continuous reverse voltage *4 Maximum forward voltage@IF=1.0A
@ 2010 Copyright By American First Semiconductor
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INSTANTANEOUS FORWARD CURRENT,(A)
FM4001G THRU FM4007G
Rating and characteristic curves
FIG.1-TYPICAL FORWARD CHARACTERISTICS
50
10 3.0 1.0
0.1
TJ=25 C
Pulse Width 300us 1% Duty Cycle
.01 .6
.7 .8 .9 1.0 1.1 1.2 1.3
FORWARD VOLTAGE,(V)
FIG.3 - TYPICAL REVERSE
CHARACTERISTICS 100
AVERAGE FORWARD CURRENT,(A)
PEAK FORWAARD SURGE CURRENT,(A)
FIG.2-TYPICAL FORWARD CURRENT DERATING CURVE
1.2 1.0 0.8 0.6
0.4
0.2 0 0
Single Phase Half Wave 60Hz Resistive Or Inductive Load
20 40
60 80 100 120 140 160 180 200
AMBIENT TEMPERATURE ( C)
FIG.4-MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
50
40
30
TJ=25 C
8.3ms Single Half
20 Sine Wave
JEDEC method
10
0
1
5 10
50 100
NUMBER OF CYCLES AT 60Hz
10 1.0
.1
TJ=100 C TJ=25 C
.01 0 20 40 60 80 100 120 140
PERCENTAGE RATED PEAK REVERSE VOLTAGE
JUNCTION CAPACITANCE,(pF)
35 30 25 20 15 10
5 0
.01
FIG.5-TYPICAL JUNCTION CAPACITANCE
.05 .1
.5 1
5 10
REVERSE VOLTAGE,(V)
50 100
REVERSE LEAKAGE CURRENT, (mA)
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