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FM4004G Dataheets PDF



Part Number FM4004G
Manufacturers American First Semiconductor
Logo American First Semiconductor
Description (FM4001G - FM4007G) 1.0A Surface Mount General Purpose Rectifiers
Datasheet FM4004G DatasheetFM4004G Datasheet (PDF)

Chip Silicon Rectifier FM4001G THRU FM4007G 1.0A Surface Mount General Purpose Rectifiers - 50V-1000V Features • Batch process design, excellent power dissipation offers. better reverse leakage current and thermal resistance. • Low profile surface mounted application in order to optimize board space. • High current capability. • High surge capability. • Glass passivated chip junction. • Lead-free parts meet environmental standards of MIL-STD-19500 /228 • Suffix "-H" indicates Halogen-free part.

  FM4004G   FM4004G


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Chip Silicon Rectifier FM4001G THRU FM4007G 1.0A Surface Mount General Purpose Rectifiers - 50V-1000V Features • Batch process design, excellent power dissipation offers. better reverse leakage current and thermal resistance. • Low profile surface mounted application in order to optimize board space. • High current capability. • High surge capability. • Glass passivated chip junction. • Lead-free parts meet environmental standards of MIL-STD-19500 /228 • Suffix "-H" indicates Halogen-free parts, ex. FM4001G-H. Mechanical data • Epoxy: UL94-V0 rated flame retardant • Case : Molded plastic, DO-214AC / SMA • Terminals : Solder plated, solderable per MIL-STD-750, Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight :Approximated 0.05 gram Package outline SMA 0.196(4.9) 0.180(4.5) 0.012(0.3) Typ. 0.106(2.7) 0.091(2.3) 0.032(0.8) Typ. 0.068(1.7) 0.060(1.5) 0.032 (0.8) Typ. Dimensions in inches and (millimeters) Maximum ratings (AT T =25oC unless otherwise noted) PARAMETER Forward rectified current See Fig.2 CONDITIONS Forward surge current Reverse current Thermal resistance Diode junction capacitance Storage temperature 8.3ms single half sine-wave superimposed on rate load (JEDEC methode) VR = VRRM TJ = 25OC VR = VRRM TJ = 100OC Junction to ambient Junction to case f=1MHz and applied 4V DC reverse voltage Symbol MIN. TYP. MAX. UNIT IO 1.0 A IFSM 30 A 5.0 IR μA 50 RθJA RθJC 50 OC/W 28 CJ 15 pF TSTG -65 +175 OC SYMBOLS FM4001G FM4002G FM4003G FM4004G FM4005G FM4006G FM4007G V * RRM 1 (V) 50 100 200 400 600 800 1000 V * RMS 2 (V) 35 70 140 280 420 560 700 V * R 3 (V) 50 100 200 400 600 800 1000 V * F 4 (V) Operating temperature TJ, (OC) 1.10 -55 to +150 *1 Repetitive peak reverse voltage *2 RMS voltage *3 Continuous reverse voltage *4 Maximum forward voltage@IF=1.0A @ 2010 Copyright By American First Semiconductor Page 1/2 INSTANTANEOUS FORWARD CURRENT,(A) FM4001G THRU FM4007G Rating and characteristic curves FIG.1-TYPICAL FORWARD CHARACTERISTICS 50 10 3.0 1.0 0.1 TJ=25 C Pulse Width 300us 1% Duty Cycle .01 .6 .7 .8 .9 1.0 1.1 1.2 1.3 FORWARD VOLTAGE,(V) FIG.3 - TYPICAL REVERSE CHARACTERISTICS 100 AVERAGE FORWARD CURRENT,(A) PEAK FORWAARD SURGE CURRENT,(A) FIG.2-TYPICAL FORWARD CURRENT DERATING CURVE 1.2 1.0 0.8 0.6 0.4 0.2 0 0 Single Phase Half Wave 60Hz Resistive Or Inductive Load 20 40 60 80 100 120 140 160 180 200 AMBIENT TEMPERATURE ( C) FIG.4-MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 50 40 30 TJ=25 C 8.3ms Single Half 20 Sine Wave JEDEC method 10 0 1 5 10 50 100 NUMBER OF CYCLES AT 60Hz 10 1.0 .1 TJ=100 C TJ=25 C .01 0 20 40 60 80 100 120 140 PERCENTAGE RATED PEAK REVERSE VOLTAGE JUNCTION CAPACITANCE,(pF) 35 30 25 20 15 10 5 0 .01 FIG.5-TYPICAL JUNCTION CAPACITANCE .05 .1 .5 1 5 10 REVERSE VOLTAGE,(V) 50 100 REVERSE LEAKAGE CURRENT, (mA) www.First-semi.com Page 2/2 .


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