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FIGB25N120TDG

American First Semiconductor

IGBT


Description
IGBT General Description Using First proprietary Trench design and advanced NPT technologv, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and sweasy parallel operation. Features ƽ NPT Trench Technology, Positive temperature coefficient ƽ Low saturation voltage: VCE(sat), typ = 2.0V @ I C = 25A and TC = 25...



American First Semiconductor

FIGB25N120TDG

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