Si1034CX

Si1034CX Vishay Siliconix Dual N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () 0.396 at VGS = 4.5 V 20 0.456 at VGS = 2.5 V 0.546 at VGS = 1.8 V 0.760 at VGS = 1.5 V ID (A) 0.5 0.2 0.2 0.05 0.75 Qg (Typ.) TrenchFET® Power MOSFET 100 % Rg Tested Gate-Source ESD Protected: 1000 V Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS Load/Power Switching for Portable Devices Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories Battery Operated Systems Power Supply Converter Circuits SC-89 S1 1 6 D1 Marking Code 4 XX YY Lot Traceability and Date Code Part # Code G1 2 5 G2 D2 3 4 S2 Top View Ordering Information: Si1034CX-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25 °C TA = 70 °C TA = 25 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS PD TJ, Tstg Limit 20 ±8 0.61a, b 0.49a, b 2 0.18a, b 0.22a, b 0.14a, b - 55 to 150 Unit V A A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb Notes: a. Surface mounted on 1" x 1" FR4 board. b. t = 5 s. t 5 s Steady State Symbol RthJA Typ. 470 560 Max. 565 675 Unit °C/W Document Number: 67468 S13-1614-Rev. C, 29-Jul-13 ...