SiR890DP

New Product SiR890DP Vishay Siliconix N-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) 0.0029 at VGS = 10 V 0.0040 at VGS = 4.5 V ID (A)a 50g 50g Qg (Typ.) 20 nC FEATURES Halogen-free According to IEC 61249-2-21 TrenchFET® Power MOSFET 100 % Rg Tested 100 % UIS Tested PowerPAK® SO-8 APPLICATIONS Low-Side MOSFET in Synchronous Buck dc-to-dc Converters - Game Machine D 6.15 mm S 1 2 3 S S 5.15 mm G 4 D 8 7 6 5 D D D G Bottom View Ordering Information: SiR890DP-T1-GE3 (Lead (Pb)-free and Halogen-free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Temperature)d, e Symbol VDS VGS ID Limit 20 ± 20 50a, g 50g 30b, c 24b, c 70 50a, g 4.5b, c 40 80 50 32 5.0b, c 3.2b, c - 55 to 150 260 Unit V Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy IDM IS IAS EAS PD A mJ Maximum Power Dissipation W Operating Junction and Storage Temperature Range Soldering Recommendations (Peak TJ, Tstg °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, f Maximum Junction-to-Case (Drain) t ≤ 10 s Steady State Symbol RthJA RthJC Typical 20 2.0 Maximum 25 2.5 Unit °C/W Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" F...