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SiR496DP Dataheets PDF



Part Number SiR496DP
Manufacturers Vishay
Logo Vishay
Description N-Channel MOSFET
Datasheet SiR496DP DatasheetSiR496DP Datasheet (PDF)

SiR496DP Vishay Siliconix N-Channel 20 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) 0.0045 at VGS = 10 V 0.0058 at VGS = 4.5 V ID (A)a, g 35g 35g Qg (Typ.) 13.2 nC FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • 100 % Avalanche Tested • Compliant to RoHS Directive 2002/95/EC PowerPAK® SO-8 APPLICATIONS 6.15 mm S 1 2 3 4 D 8 7 6 5 D D D S S G 5.15 mm • High Current DC/DC - Low-Side Switch • POL D G Bottom View Ordering.

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SiR496DP Vishay Siliconix N-Channel 20 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) 0.0045 at VGS = 10 V 0.0058 at VGS = 4.5 V ID (A)a, g 35g 35g Qg (Typ.) 13.2 nC FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • 100 % Avalanche Tested • Compliant to RoHS Directive 2002/95/EC PowerPAK® SO-8 APPLICATIONS 6.15 mm S 1 2 3 4 D 8 7 6 5 D D D S S G 5.15 mm • High Current DC/DC - Low-Side Switch • POL D G Bottom View Ordering Information: SiR496DP-T1-GE3 (Lead (Pb)-free and Halogen-free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Temperature)d, e Symbol VDS VGS ID Limit 20 ± 20 35g 35g 25.7b, c 20.5b, c 70 35g 4.5b, c 20 20 27.7 17.7 5.0b, c 3.2b, c - 55 to 150 260 Unit V Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy IDM IS IAS EAS PD A mJ Maximum Power Dissipation W Operating Junction and Storage Temperature Range Soldering Recommendations (Peak TJ, Tstg °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, f Maximum Junction-to-Case (Drain) t ≤ 10 s Steady State Symbol RthJA RthJC Typical 20 3.4 Maximum 25 4.5 Unit °C/W Notes: a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. See solder profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 70 °C/W. g. Package limited. Document Number: 68859 S10-2004-Rev. B, 06-Sep-10 www.vishay.com 1 SiR496DP Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Dynamic b Symbol VDS ΔVDS/TJ ΔVGS(th)/TJ VGS(th) IGSS IDSS ID(on) RDS(on) gfs Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf td(on) tr td(off) tf IS ISM VSD trr Qrr ta tb Test Conditions VGS = 0 V, ID = 250 µA ID = 250 µA VDS = VGS, ID = 250 µA VDS = 0 V, VGS = ± 20 V VDS = 20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 55 °C VDS ≥ 5 V, VGS = 10 V VGS = 10 V, ID = 20 A VGS = 4.5 V, ID = 10 A VDS = 10 V, ID = 20 A Min. 20 Typ. Max. Unit V 20 - 4.5 1.2 2.5 ± 100 1 10 30 0.0033 0.0046 50 1570 0.0045 0.0058 mV/°C V nA µA A Ω S Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Current Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time a VDS = 10 V, VGS = 0 V, f = 1 MHz VDS = 10 V, VGS = 10 V, ID = 10 A VDS = 10 V, VGS = 4.5 V, ID = 10 A f = 1 MHz VDD = 10 V, RL = 1.0 Ω ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω 0.2 555 195 28 13.2 3.8 4.0 0.7 21 13 29 17 10 1.4 35 26 55 30 20 16 40 16 35 70 0.75 22 10 11 11 1.1 44 20 42 20 pF nC Ω ns VDD = 10 V, RL = 1 Ω ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω 8 22 8 TC = 25 °C IS = 3 A A V ns nC ns IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 68859 S10-2004-Rev. B, 06-Sep-10 SiR496DP Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 70 VGS = 10 V thru 4 V 56 I D - Drain Current (A) I D - Drain Current (A) 4 5 42 VGS = 3 V 28 3 2 TC = 25 °C 1 TC = 125 °C TC = - 55 °C 14 0 0.0 0 0.5 1.0 1.5 2.0 2.5 0 1 2 3 4 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 0.0060 2000 Transfer Characteristics Ciss R DS(on) - On-Resistance (Ω) 0.0054 VG.


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