Si3442CDV

Si3442CDV Vishay Siliconix N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () Max. 0.027 at VGS = 10 V 0.030 at VGS = 4.5 V 0.049 at VGS = 2.5 V TSOP-6 Top View D 1 6 D ID (A) 8d 7.5 6.1 a Qg (Typ.) 4.3 nC TrenchFET® Power MOSFET 100 % Rg and UIS Tested Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS DC/DC Converters Boost Converters Load Switch D (1, 2, 5, 6) 3 mm D 2 5 D Marking Code BE G 3 2.85 mm 4 S XXX Lot Traceability and Date Code Part # Code G (3) (4) Ordering Information: Si3442CDV-T1-GE3 (Lead (Pb)-free and Halogen-free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current (t = 300 µs) Continuous Source-Drain Diode Current Avalanche Current Single Avalanche Energy TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range TJ, Tstg PD IDM IS IAS EAS ID Symbol VDS VGS Limit 20 ± 12 8d 6.6 6.5a, b 5.2a, b 20 2.2 1.4a, b 8 3.2 2.7 1.7 1.7a, b 1.1a, b - 55 to 150 °C W mJ A Unit V THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta, c Maximum Junction-to-Foot (Drain) t5s Steady State Symbol RthJA RthJF Typical 61 38 Maximum 74 46 Unit °C/W Notes: a. Surface mounted on 1" x 1" FR4 bo...