Si8466EDB

www.vishay.com Si8466EDB Vishay Siliconix N-Channel 8 V (D-S) MOSFET MICRO FOOT® 1 x 1 S S2 xxxxxxx 3 1 1 1 mm 4G D 1 mm Backside View Bump Side View Marking code: xxxx = 8466 PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = 4.5 V RDS(on) max. () at VGS = 2.5 V RDS(on) max. () at VGS = 1.5 V RDS(on) max. () at VGS = 1.2 V Qg typ. (nC) ID (A) a, e Configuration 8 0.043 0.046 0.060 0.090 6.8 5.4 Single FEATURES TrenchFET® power MOSFET Typical ESD protection 3000 V HBM Ultra small 1 mm x 1 mm maximum outline Ultra thin 0.548 mm maximum height Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS D Low on-resistance load switch for portable devices - Low power consumption, low voltage drop G - Increased battery life - Space savings on PCB N-Channel MOSFET S ORDERING INFORMATION Package Lead (Pb)-free and halogen-free MICRO FOOT Si8466EDB-T2-E1 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 °C) Pulsed drain current (t = 300 μs) Continuous source-drain diode current Maximum power dissipation Operating junction and storage temperature range Package reflow conditions c TA = 25 °C TA = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C TA = 25 °C TA = 70 °C TA = 25 °C TA = 70 °C VPR IR/convection VDS VGS ID IDM IS PD TJ, Tstg LIMIT 8 ±5 5.4 a 4.4 a 3.6 b 2.9 b 20 1.5 a 0.65 b 1.8 ...