SiA537EDJ

SiA537EDJ www.vishay.com Vishay Siliconix N-Channel 12 V (D-S) and P-Channel 20 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) N-Channel 12 RDS(on) () MAX. 0.028 at VGS = 4.5 V 0.033 at VGS = 2.5 V 0.042 at VGS = 1.8 V 0.054 at VGS = -4.5 V P-Channel -20 0.070 at VGS = -2.5 V 0.104 at VGS = -1.8 V 0.165 at VGS = -1.5 V ID (A) 4.5 a 4.5 a 4.5 a -4.5 a -4.5 a -4.5 a -1.5 9.5 nC 6.2 nC Qg (TYP.) FEATURES TrenchFET® Power MOSFETs Typical ESD protection: N-channel 2400 V P-channel 2000 V 100 % Rg tested Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS Portable devices such as smart phones, tablet PCs and mobile computing - Load switches - Power management - DC/DC converters D1 S2 PowerPAK® SC-70-6L Dual S2 4 G2 5 D1 6 D1 D2 1 m 5m 2.0 Top View 3 D2 Bottom View 2 G1 1 S1 Marking Code: EK Ordering Information: SiA537EDJ-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current (t = 100 μs) Source Drain Current Diode Current TC = 25 °C TA = 25 °C TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) d,e TJ, Tstg PD IDM IS ID SYMBOL VDS VGS 4.5 a 4.5 a 4.5 4.5 a,b,c a,b,c S13-2635-Rev. A, 30-Dec-13 2. 05 m m...