N-Channel MOSFET
New Product
Si1442DH
Vishay Siliconix
N-Channel 12 V (D-S) MOSFET
FEATURES PRODUCT SUMMARY
VDS (V) 12 RDS(on) () (Max...
Description
New Product
Si1442DH
Vishay Siliconix
N-Channel 12 V (D-S) MOSFET
FEATURES PRODUCT SUMMARY
VDS (V) 12 RDS(on) () (Max.) 0.020 at VGS = 4.5 V 0.024 at VGS = 2.5 V 0.030 at VGS = 1.8 V ID (A) 4 4 4 13.1 nC
a
Qg (Typ.)
TrenchFET® Power MOSFET 100 % Rg Tested Material categorization: For definitions of compliance please see www.vishay.com/doc?99912
APPLICATIONS
SOT-363 SC-70 (6-LEADS)
D 1 6 D D D 2 5 D
Load Switch and Battery Switch for Portable Devices DC/DC Converters Low On-Resistance for Low Voltage Drop
Marking Code AT XX YY
G 3 4 S G
Top View Ordering Information: Si1442DH-T1-GE3 (Lead (Pb)-free and Halogen-free)
Lot Traceability and Date Code Part # Code
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter Drain-Source Voltage Gate-Source Voltage TF = 25 °C Continuous Drain Current (TJ = 150 °C) TF = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current (t = 300 µs) Continuous Source-Drain Diode Current TF = 25 °C TA = 25 °C TF = 25 °C Maximum Power Dissipation TF = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) TJ, Tstg PD IDM IS ID Symbol VDS VGS Limit 12 ±8 4a 4a 4a, b, c 4a, b, c 20 2.3 1.3b, c 2.8 1.8 1.56b, c 1b, c - 55 to 150 260 °C W A Unit V
THERMAL RESISTANCE RATINGS
Parameter Maximum Junction-to-Ambientb, d t5s Steady State Maximum Junction-to-Foot (Drain) Notes: a. TF = 25 °C, package limited. b. Surface mounted on 1" x 1" FR4 boa...
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