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HM6216514I Dataheets PDF



Part Number HM6216514I
Manufacturers Renesas
Logo Renesas
Description 8M SRAM
Datasheet HM6216514I DatasheetHM6216514I Datasheet (PDF)

HM6216514I Series Wide Temperature Range Version 8 M SRAM (512-kword × 16-bit) ADE-203-1303B (Z) Rev. 1.0 Oct. 23, 2002 Description The Hitachi HM6216514I Series is 8-Mbit static RAM organized 524,288-word × 16-bit. HM6216514I Series has realized higher density, higher performance and low power consumption by employing CMOS process technology (6-transistor memory cell). It offers low power standby power dissipation; therefore, it is suitable for battery backup systems. It is packaged in standa.

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HM6216514I Series Wide Temperature Range Version 8 M SRAM (512-kword × 16-bit) ADE-203-1303B (Z) Rev. 1.0 Oct. 23, 2002 Description The Hitachi HM6216514I Series is 8-Mbit static RAM organized 524,288-word × 16-bit. HM6216514I Series has realized higher density, higher performance and low power consumption by employing CMOS process technology (6-transistor memory cell). It offers low power standby power dissipation; therefore, it is suitable for battery backup systems. It is packaged in standard 44-pin plastic TSOPII. Features • • • Single 5.0 V supply: 5.0V ± 10 % Fast access time: 55 ns (Max) Power dissipation:  Active: 10 mW/MHz (Typ)  Standby: 7.5 µW (Typ) Completely static memory.  No clock or timing strobe required Equal access and cycle times Common data input and output.  Three state output Battery backup operation. Temperature range: –40 to +85°C • • • • • HM6216514I Series Ordering Information Type No. HM6216514LTTI-5SL Access time 55 ns Package 400-mil 44-pin plastic TSOPII (normal-bend type) (TTP-44DE) 2 HM62162514I Series Pin Arrangement 44-pin TSOP A4 A3 A2 A1 A0 CS I/O0 I/O1 I/O2 I/O3 VCC VSS I/O4 I/O5 I/O6 I/O7 WE A18 A17 A16 A15 A14 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 (Top view) 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 A5 A6 A7 OE UB LB I/O15 I/O14 I/O13 I/O12 VSS VCC I/O11 I/O10 I/O9 I/O8 A8 A9 A10 A11 A12 A13 Pin Description Pin name A0 to A18 I/O0 to I/O15 CS WE OE LB UB VCC VSS Function Address input Data input/output Chip select Write enable Output enable Lower byte select Upper byte select Power supply Ground 3 HM6216514I Series Block Diagram LSB V CC V SS • • • • • A5 A6 A7 A4 A3 A8 A9 A10 A11 A12 MSB A13 Row decoder Memory matrix 2,048 x 2,048 I/O0 Input data control I/O15 • • Column I/O Column decoder • • LSB A15 A16 A17 A18 A0 A1 A2 A14MSB • • CS LB UB WE OE Control logic 4 HM62162514I Series Operation Table CS H × L L L L L L L WE × × H H H L L L H OE × × L L L × × × H UB × H L H L L H L × LB × H L L H L L H × I/O0 to I/O7 High-Z High-Z Dout Dout High-Z Din Din High-Z High-Z I/O8 to I/O15 High-Z High-Z Dout High-Z Dout Din High-Z Din High-Z Operation Standby Standby Read Lower byte read Upper byte read Write Lower byte write Upper byte write Output disable Note: H: V IH, L: VIL, ×: VIH or VIL Absolute Maximum Ratings Parameter Power supply voltage relative to V SS Terminal voltage on any pin relative to V SS Power dissipation Storage temperature range Storage temperature range under bias Symbol VCC VT PT Tstg Tbias Value –0.5 to + 7.0 –0.5* to V CC + 0.3* 1.0 –55 to +125 –40 to +85 1 2 Unit V V W °C °C Notes: 1. VT min: –3.0 V for pulse half-width ≤ 30 ns. 2. Maximum voltage is +7.0 V. DC Operating Conditions Parameter Supply voltage Symbol VCC VSS Input high voltage Input low voltage Ambient temperature range Note: VIH VIL Ta Min 4.5 0 2.2 –0.3 –40 Typ 5.0 0 — — — Max 5.5 0 VCC + 0.3 0.8 85 Unit V V V V °C 1 Note 1. VIL min: –3.0 V for pulse half-width ≤ 30 ns. 5 HM6216514I Series DC Characteristics Parameter Input leakage current Output leakage current Symbol Min |ILI| |ILO | — — Typ* 1 Max — — 1 1 Unit µA µA Test conditions Vin = VSS to V CC CS = VIH or OE = VIH or WE = VIL or, LB = UB =VIH , VI/O = VSS to V CC CS = VIL, Others = VIH/VIL, I I/O = 0 mA Min. cycle, duty = 100%, I I/O = 0 mA, CS = VIL, Others = VIH/VIL Cycle time = 1 µs, duty = 100%, I I/O = 0 mA, CS ≤ 0.2 V, VIH ≥ V CC – 0.2 V, VIL ≤ 0.2 V CS = VIH 0 V ≤ Vin (1) CS ≥ V CC – 0.2 V or (2) LB = UB ≥ V CC – 0.2 V, CS ≤ 0.2 V I OH = –1 mA I OL = 2.1 mA Operating current Average operating current I CC I CC1 — — — 16 20 35 mA mA I CC2 — 2 5 mA Standby current Standby current I SB I SB1 — — 0.1 0.8 0.3 10 mA µA Output high voltage Output low voltage VOH VOL 2.4 — — — — 0.4 V V Notes: 1. Typical values are at VCC = 5.0 V, Ta = +25°C and not guaranteed. Capacitance (Ta = +25°C, f = 1.0 MHz) Parameter Input capacitance Input/output capacitance Note: Symbol Cin CI/O Min — — Typ — — Max 8 10 Unit pF pF Test conditions Vin = 0 V VI/O = 0 V Note 1 1 1. This parameter is sampled and not 100% tested. 6 HM62162514I Series AC Characteristics (Ta = –40 to +85°C, VCC = 5.0 V ± 10 %, unless otherwise noted.) Test Conditions • • • • Input pulse levels: VIL = 0.4 V, VIH = 2.2 V Input rise and fall time: 5 ns Input and output timing reference levels: 1.5 V Output load: 1 TTL Gate + C L (50 pF) (Including scope and jig) Read Cycle HM6216514I -5 Parameter Read cycle time Address access time Chip select access time Output enable to output valid Output hold from address change LB, UB access time Chip select to output in low-Z LB, UB enable to low-z Output enable to output in low-Z Chip deselect to output in high-Z LB, UB disable to high-Z Output disable to output in high-Z Symbol t RC t AA t ACS t OE t OH t BA t CLZ t BLZ t OLZ t CHZ t BHZ t OHZ Min 55 — — — 10 — 10 5 5 0 0 0 Max — 55 55 35 — 55 — — — 20 20 20 Unit ns ns ns ns ns ns .


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