Document
ZM-PTZ3.6B ~ ZM-PTZ36B
SILICON EPITAXIAL PLANAR ZENER DIODES
Features 1) Small surface mounting type 2) 1W of power can be obtained despite compact size 3) High surge withstand level LL-41
Applications 1) Voltage regulation and voltage limiting 2) Voltage surge absorption
Absolute Maximum Ratings (Ta = 25oC)
Symbol Power Dissipation 1) Junction Temperature Storage Temperature Range Ptot Tj TS Value 1 150 -55 to +150 Unit W
O O
C C
1) Mounting density of other power components should be taken into consideration when laying out the pattern.
SEMTECH ELECTRONICS LTD.
®
(Subsidiary of Semtech International Holdings Limited, acompany listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 10/05/2005
ZM-PTZ3.6B ~ ZM-PTZ36B
Zener Voltage Range TYPE Min.
ZM-PTZ3.6B ZM-PTZ3.9B ZM-PTZ4.3B ZM-PTZ4.7B ZM-PTZ5.1B ZM-PTZ5.6B ZM-PTZ6.2B ZM-PTZ6.8B ZM-PTZ7.5B ZM-PTZ8.2B ZM-PTZ9.1B ZM-PTZ10B ZM-PTZ11B ZM-PTZ12B ZM-PTZ13B ZM-PTZ15B ZM-PTZ16B ZM-PTZ18B ZM-PTZ20B ZM-PTZ22B ZM-PTZ24B ZM-PTZ27B ZM-PTZ30B ZM-PTZ33B ZM-PTZ36B 3.6 3.9 4.3 4.7 5.1 5.6 6.2 6.8 7.5 8.2 9.1 10 11 12 13.3 14.7 16.2 18 20 22 24 27 30 33 36
Operating Resistance Zz (Ω) IZ (mA)
40 40 40 40 40 40 40 40 40 40 40 40 20 20 20 20 20 20 20 10 10 10 10 10 10
Reverse current IR (uA) Max.
20 20 20 20 20 20 20 20 20 20 20 10 10 10 10 10 10 10 10 10 10 10 10 10 10
Vz (V) Max.
4 4.4 4.8 5.2 5.7 6.3 7 7.7 8.4 9.3 10.2 11.2 12.3 13.5 15 16.5 18.3 20.3 22.4 24.5 27.6 30.8 34 37 40
IZ (mA)
40 40 40 40 40 40 40 40 40 40 40 40 20 20 20 20 20 20 20 10 10 10 10 10 10
Max.
15 15 15 10 8 8 6 6 4 4 6 6 8 8 10 10 12 12 14 14 16 16 18 18 20
VR (V)
1 1 1 1 1 1.5 3 3.5 4 5 6 7 8 9 10 11 12 13 15 17 19 21 23 25 27
1) Tested with pulses tp = 20 ms. 2) The operating resistances (ZZ, ZZK) are measured by superimposing a minute alternating current on the regulated current (Iz).
SEMTECH ELECTRONICS LTD.
®
(Subsidiary of Semtech International Holdings Limited, acompany listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 10/05/2005
ZM-PTZ3.6B ~ ZM-PTZ36B
Derating curve
1200 Glass epoxy substrate 32x30x1.6(mm) 200
Rise in surface temperature
ALUMINA SUBSTRATE 114X124X1.6(mm) 200
Rise in surface temperature
Power dissipation(mW)
1.5W
Rise in diode a surface temperature( C)
Rise in diode a surface temperature( C)
1.5W
1W
800
Ceramic substrate 82x30x1.0(mm)
100 1W
100
0.5W
400 Individual part (not mounted)
0.5W 0 50 87.5 100 150 200 1 10 100 0 1
GLASS EPOXY SUBSTRATE 144X220X1.6(mm) 10 100
0
Ta ( C)
Mounting quantity(pcs/substrate)
Mounting quantity(pcs/substrate)
0.10
Zener voltage - temp. coefficient characteristics
Iz=20mA Iz=40mA
Zener voltage characteristics
100m 4.3 4.7 5.1 10m 3.9 3.6 5.6 6.2 6.8 7.5 8.2 9.1 10 12 11 13 15 16 18 20 22
Temperature coefficient (%/ C)
0.08
24
27
30
33
36
0.04
Zener current, (A)
125-25 C 0
1m
0
100
-0.04
10
-0.08 10 20 30 40
1
0
5
10
15
20
25
30
35
40
Zener voltage (V)
Zener voltage (V)
SEMTECH ELECTRONICS LTD.
.