2N930

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTORS 2N930 2N930A TO-18 Metal Can Package Low Noise Transistors ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Power Dissipation @ Ta=25ºC Derate Above 25ºC Power Dissipation @ Tc=25ºC Derate Above 25ºC Operating And Storage Junction Temperature Range THERMAL CHARACTERISTICS Junction to Ambient in free air Junction to Case SYMBOL VCEO VCBO VEBO IC PD PD Tj, Tstg 2N930 45 45 5 30 300 1.72 600 3.42 - 65 to +200 2N930A 60 60 6 UNIT V V V mA mW mW/ ºC mW mW/ ºC ºC Rth (j-a) Rth (j-c) 583 292 2N930 >45 >45 >5 <10 <2 <10 <10 <10 <1.0 0.7 - 0.9 100-300 >20 >150 <600 <600 2N930A >60 >60 >6 <2 <2 <2 <2 <2 <0.5 0.7 - 0.9 >60 100-300 >30 ºC/W ºC/W UNIT V V V nA nA nA nA µA V V ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION *VCEO IC=10mA, IB=0 Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Cut Off Current Collector Cut Off Current Emitter Cut Off Current Collector Cut Off Current Collector Emitter Saturation Voltage Base Emitter Saturation Voltage DC Current Gain VCBO VEBO ICBO ICEO IEBO ICES *VCE (sat) *VBE (sat) hFE IC=10µA, IE=0 IE=10µA, IC=0 VCB=45V, IE=0 VCE=5V, IB=0 VEB=5V, IC=0 VCE=45V, VBE=0 VCE=45V, VBE=0, Ta=170ºC IC=10mA, IB=0.5mA IC=10mA, IB=0.5mA IC=1µA, VCE=5V IC=10µA, VCE=5V IC=10µ...