MRF9060

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Available at: http://www.motorola.com/rf/ Tools RF Reference Design Library The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The high gain and broadband performance of these devices makes them ideal for large–signal, common–source amplifier applications in 26 volt base station equipment. Device Features: Typical Two–Tone Performance at 945 MHz, 26 Volts Output Power – 60 Watts PEP Power Gain – 16 dB Efficiency – 40% IMD – –31 dBc Integrated ESD Protection Ease of Design for Gain and Insertion Phase Flatness Capable of Handling 10:1 VSWR, @ 26 Vdc, 945 MHz, 60 Watts (CW) Output Power Excellent Thermal Stability Characterized with Series Equivalent Large–Signal Impedance Parameters MRF9060 MRF9060S MRF9060SR1 NARROWBAND CDMA 865–895 MHZ CASE 360B–04, STYLE 1 (MRF9060) CASE 360C–04, STYLE 1 (MRF9060S) MRF9060 REFERENCE DESIGN Designed by: David Runton and John Kinney, Motorola SPS REFERENCE DESIGN This reference design is designed to demonstrate the RF performance characteristics of the MRF9060 when applied to the 865 – 895 MHz narrowband CDMA frequency band. The reference design is tuned for performance at 60 watts average output power, VDS = 26 volts, and IDQ = 600 mA. product or products, without charge. The reference design contains easy–to–copy, fully functional ampli...