MDF9N60TH

MDF9N60 N-channel MOSFET 600V MDF9N60 N-Channel MOSFET 600V, 9A, 0.75Ω General Description The MDF9N60 uses advanced MagnaChip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDF9N60 is suitable device for SMPS, high Speed switching and general purpose applications. Features VDS = 600V VDS = 660V ID = 9.0A RDS(ON) ≤ 0.75Ω @ Tjmax @ VGS = 10V @ VGS = 10V Applications Power Supply PFC High Current, High Speed Switching G D S Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Drain-Source Voltage @ Tjmax Gate-Source Voltage Continuous Drain Current (※) Pulsed Drain Current(1) Power Dissipation Repetitive Avalanche Energy EAR(1) Peak Diode Recovery dv/dt(3) Single Pulse Avalanche Energy(4) Junction and Storage Temperature Range ※ Id limited by maximum junction temperature TC=25 C Derate above 25 C o o Symbol VDSS VDSS @ Tjmax VGSS TC=25 C TC=100 C IDM PD EAR Dv/dt EAS TJ, Tstg o o Rating 600 660 ±30 9.0 5.7 32 48 0.38 4.8 4.5 480 -55~150 Unit V V V A A A W W/ oC mJ V/ns mJ o ID C Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Nov 2009. Version 2.2 (1) (1) Symbol RθJA RθJC 1 Rating 62.5 2.62 Unit o C/W MagnaChip Semiconductor Ltd. MDF9N60 N-channel MOSFET 600V Ordering Information Part Number MDF9N60TH Temp. Range -55~150oC Package TO-220F Packing Tube RoHS Status Halogen Free Electrical Characteristics (Ta...