Document
FGH75N60UF 600V, 75A Field Stop IGBT
April 2009
FGH75N60UF
600V, 75A Field Stop IGBT
Features
• High Current Capability • Low Saturation Voltage: VCE(sat) =1.9V @ IC = 75A • High Input Impedance • Fast Switching • RoHS Compliant
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General Description
Using Novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop IGBTs offer the optimum performance for Induction Heating, UPS, SMPS and PFC applications where low conduction and switching losses are essential.
Applications
• Induction Heating, UPS, SMPS, PFC
E
C G
COLLECTOR (FLANGE)
Absolute Maximum Ratings
Symbol
VCES VGES IC ICM (1) PD TJ Tstg TL
Description
Collector to Emitter Voltage Gate to Emitter Voltage Collector Current Collector Current Pulsed Collector Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds @ TC = 25oC @ TC = 100oC @ TC = 25 C @ TC = 25oC @ TC = 100 C
o o
Ratings
600 20 150 75 225 452 181 -55 to +150 -55 to +150 300
Units
V V A A A W W
o o o
C C C
Notes: 1: Repetitive rating: Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RJC(IGBT) RJA
Parameter
Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
Typ.
-
Max.
0.276 40
Units
o o
C/W C/W
©2009 Fairchild Semiconductor Corporation
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www.fairchildsemi.com
FGH75N60UF Rev. A1
FGH75N60UF 600V, 75A Field Stop IGBT
Package Marking and Ordering Information
Device Marking
FGH75N60UF
Device
FGH75N60UFTU
Package
TO-247
Packaging Type
Tube
Max Qty Qty per Tube
30ea
per Box
-
Electrical Characteristics of the IGBT
Symbol
Off Characteristics BVCES BVCES TJ ICES IGES
TC = 25°C unless otherwise noted
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250A Temperature Coefficient of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 250A VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V
600 -
0.75 -
250 ±400
V V/oC A nA
On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage IC = 250A, VCE = VGE IC = 75A, VGE = 15V IC = 75A, VGE = 15V, TC = 125oC 4.0 5.0 1.9 2.15 6.5 2.4 V V V
Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz 3850 375 147 pF pF pF
Switching Characteristics td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Qg Qge Qgc Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Total Gate Charge Gate to Emitter Charge Gate to Collector Charge VCE = 400V, IC = 75A, VGE = 15V VCC = 400V, IC = 75A, RG = 3, VGE = 15V, Inductive Load, TC = 125oC VCC = 400V, IC = 75A, RG = 3.