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FGH75N60UF Dataheets PDF



Part Number FGH75N60UF
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description 75A Field Stop IGBT
Datasheet FGH75N60UF DatasheetFGH75N60UF Datasheet (PDF)

FGH75N60UF 600V, 75A Field Stop IGBT April 2009 FGH75N60UF 600V, 75A Field Stop IGBT Features • High Current Capability • Low Saturation Voltage: VCE(sat) =1.9V @ IC = 75A • High Input Impedance • Fast Switching • RoHS Compliant tm General Description Using Novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop IGBTs offer the optimum performance for Induction Heating, UPS, SMPS and PFC applications where low conduction and switching losses are essential. Applications • Indu.

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FGH75N60UF 600V, 75A Field Stop IGBT April 2009 FGH75N60UF 600V, 75A Field Stop IGBT Features • High Current Capability • Low Saturation Voltage: VCE(sat) =1.9V @ IC = 75A • High Input Impedance • Fast Switching • RoHS Compliant tm General Description Using Novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop IGBTs offer the optimum performance for Induction Heating, UPS, SMPS and PFC applications where low conduction and switching losses are essential. Applications • Induction Heating, UPS, SMPS, PFC E C G COLLECTOR (FLANGE) Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) PD TJ Tstg TL Description Collector to Emitter Voltage Gate to Emitter Voltage Collector Current Collector Current Pulsed Collector Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds @ TC = 25oC @ TC = 100oC @ TC = 25 C @ TC = 25oC @ TC = 100 C o o Ratings 600  20 150 75 225 452 181 -55 to +150 -55 to +150 300 Units V V A A A W W o o o C C C Notes: 1: Repetitive rating: Pulse width limited by max. junction temperature Thermal Characteristics Symbol RJC(IGBT) RJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Typ. - Max. 0.276 40 Units o o C/W C/W ©2009 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FGH75N60UF Rev. A1 FGH75N60UF 600V, 75A Field Stop IGBT Package Marking and Ordering Information Device Marking FGH75N60UF Device FGH75N60UFTU Package TO-247 Packaging Type Tube Max Qty Qty per Tube 30ea per Box - Electrical Characteristics of the IGBT Symbol Off Characteristics BVCES BVCES TJ ICES IGES TC = 25°C unless otherwise noted Parameter Test Conditions Min. Typ. Max. Units Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250A Temperature Coefficient of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 250A VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V 600 - 0.75 - 250 ±400 V V/oC A nA On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage IC = 250A, VCE = VGE IC = 75A, VGE = 15V IC = 75A, VGE = 15V, TC = 125oC 4.0 5.0 1.9 2.15 6.5 2.4 V V V Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz 3850 375 147 pF pF pF Switching Characteristics td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Qg Qge Qgc Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Total Gate Charge Gate to Emitter Charge Gate to Collector Charge VCE = 400V, IC = 75A, VGE = 15V VCC = 400V, IC = 75A, RG = 3, VGE = 15V, Inductive Load, TC = 125oC VCC = 400V, IC = 75A, RG = 3.


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