SCS206AG
SiC Schottky Barrier Diode
VR 650V IF 6A QC 9nC
Features 1) Shorter recovery time 2) Reduced temperature depen...
SCS206AG
SiC
Schottky Barrier Diode
VR 650V IF 6A QC 9nC
Features 1) Shorter recovery time 2) Reduced temperature dependence 3) High-speed switching possible
Applications ・PFC Boost Topology ・Secondary Side Rectification ・Data Center ・PV Power Conditioners
Outline
TO-220AC
(1)
Datasheet
(2) (3)
Inner circuit
(1)
(1) Cathode (2) Cathode (3) Anode
(2) (3)
Packaging specifications Packaging
Tube
Reel size (mm)
-
Tape width (mm) Type
Basic ordering unit (pcs)
50
Packing code
C
Marking
SCS206AG
Absolute maximum ratings (Tj = 25°C) Parameter
Symbol
Reverse voltage (repetitive peak)
VRM
Reverse voltage (DC)
VR
Continuous forward current
(Tc= 138°C)
IF
Surge nonrepetitive forward current
PW=10ms sinusoidal, Tj=25°C PW=10ms sinusoidal, Tj=150°C PW=10s square, Tj=25°C
Repetitive peak forward current
IFSM IFRM
i2t value
PW=10ms, Tj=25°C PW=10ms, Tj=150°C
∫i2dt
Total power dissipation
PD
Junction temperature
Tj
Range of storage temperature
Tstg
*1 Tc=100°C, Tj=150°C, Duty cycle=10% *2 Tc=25°C
Value 650 650
6 23 18 90 27 *1 2.6 1.6 51 *2 175 55 to 175
Unit V V A A A A A A2s A2s W °C °C
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1/5
TSQ50220-SCS206AG 9.May.2018 - Rev.002
SCS206AG
Datasheet
Electrical characteristics (Tj = 25°C)
Parameter
Symbol
Conditions
Values Min. Typ. Max.
DC blocking voltage
VDC IR =1.2mA
650 -
-
IF=6A,Tj=25°C
- 1.35 1.55
Forward voltage
VF IF=6A,Tj=150°C
- 1.55 -
IF=6A,...