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ESD5Z5.0T1G Dataheets PDF



Part Number ESD5Z5.0T1G
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Transient Voltage Suppressors
Datasheet ESD5Z5.0T1G DatasheetESD5Z5.0T1G Datasheet (PDF)

ESD5Z2.5T1G Series, SZESD5Z2.5T1G Series ESD Protection Diode Micro−Packaged Diodes for ESD Protection The ESD5Z Series is designed to protect voltage sensitive components from ESD and transient voltage events. Excellent clamping capability, low leakage, and fast response time, make these parts ideal for ESD protection on designs where board space is at a premium. Because of its small size, it is suited for use in cellular phones, portable devices, digital cameras, power supplies and many other.

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ESD5Z2.5T1G Series, SZESD5Z2.5T1G Series ESD Protection Diode Micro−Packaged Diodes for ESD Protection The ESD5Z Series is designed to protect voltage sensitive components from ESD and transient voltage events. Excellent clamping capability, low leakage, and fast response time, make these parts ideal for ESD protection on designs where board space is at a premium. Because of its small size, it is suited for use in cellular phones, portable devices, digital cameras, power supplies and many other portable applications. Specification Features: • Low Clamping Voltage • Small Body Outline Dimensions: 0.047″ x 0.032″ (1.20 mm x 0.80 mm) • Low Body Height: 0.028″ (0.7 mm) • Stand−off Voltage: 2.5 V − 12 V • Peak Power up to 240 Watts @ 8 x 20 ms Pulse • Low Leakage • Response Time is Typically < 1 ns • ESD Rating of Class 3 (> 16 kV) per Human Body Model • IEC61000−4−2 Level 4 ESD Protection • IEC61000−4−4 Level 4 EFT Protection • SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant* Mechanical Characteristics: CASE: Void-free, transfer-molded, thermosetting plastic Epoxy Meets UL 94 V−0 LEAD FINISH: 100% Matte Sn (Tin) MOUNTING POSITION: Any QUALIFIED MAX REFLOW TEMPERATURE: 260°C Device Meets MSL 1 Requirements www.onsemi.com SOD−523 CASE 502 STYLE 1 1 Cathode 2 Anode MARKING DIAGRAM M G XX 1 G2 XX = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping† SZ/ESD5ZxxxT1G SOD−523 Pb−Free 3000 / Tape & Reel SZ/ESD5ZxxxT5G SOD−523 Pb−Free 8000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DEVICE MARKING INFORMATION See specific marking information in the device marking column of the Electrical Characteristics tables starting on page 3 of this data sheet. © Semiconductor Components Industries, LLC, 2014 1 September, 2018 − Rev. 15 Publication Order Number: ESD5Z2.5T1/D ESD5Z2.5T1G Series, SZESD5Z2.5T1G Series MAXIMUM RATINGS Rating Symbol Value Unit IEC 61000−4−2 (ESD) Contact Air kV ±30 ±30 IEC 61000−4−4 (EFT) 40 A ESD Voltage Per Human Body Model Per Machine Model kV 16 V 400 Total Power Dissipation on FR−4 Board (Note 1) @ TA = 25°C °PD° 500 mW Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C Lead Solder Temperature − Maximum (10 Second Duration) TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR−4 printed circuit board, single−sided copper, mounting pad 1 cm2. See Application Note AND8308/D for further description of survivability specs. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Parameter IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRWM Working Peak Reverse Voltage IR Maximum Reverse Leakage Current @ VRWM VBR Breakdown Voltage @ IT IT Test Current IF Forward Current VF Forward Voltage @ IF Ppk Peak Power Dissipation C Max. Capacitance @VR = 0 and f = 1 MHz *See Application Note AND8308/D for detailed explanations of datasheet parameters. I IF VC VBR VRWM IIRT VF V IPP Uni−Directional www.onsemi.com 2 ESD5Z2.5T1G Series, SZESD5Z2.5T1G Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 1.1 V Max. @ IF = 10 mA for all types) VBR (V) VRWM IR (mA) @ IT (V) @ VRWM (Note 2) IT Device* Device Marking Max Max ESD5Z2.5T1G/T5G ZD 2.5 6.0 ESD5Z3.3T1G/T5G ZE 3.3 0.05 ESD5Z5.0T1G/T5G ZF 5.0 0.05 Min mA 4.0 1.0 5.0 1.0 6.2 1.0 VC (V) @ IPP = 5.0 A† Typ 6.5 8.4 11.6 VC (V) @ IPP Ppk C Max IPP† (A)† (W)† (pF) VC Per IEC61000−4−2 Max Max Max Typ (Note 3) 10.9 11.0 120 145 Figures 1 and 2 14.1 11.2 158 105 See Below (Note 4) 18.6 9.4 174 80 ESD5Z6.0T1G/T5G ZG 6.0 0.01 6.8 1.0 12.4 20.5 8.8 181 70 ESD5Z7.0T1G/T5G ZH 7.0 0.01 7.5 1.0 13.5 22.7 8.8 200 65 ESD5Z12T1G/T5G ZM 12 0.01 14.1 1.0 17 25 9.6 240 55 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. * Includes SZ-prefix devices where applicable. †Surge current wavefor.


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