AUIRFN8459

AUTOMOTIVE GRADE Features  Advanced Process Technology  Dual N-Channel MOSFET  Ultra Low On-Resistance  175°C Operating Temperature  Fast Switching  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotive Qualified * Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast swithcing speed and improved repetitive avalanche rating. These features combine to make this product an extremely efficient and reliable device for use in Automotive and wide variety of other applications. Applications  12V Automotive Systems  Brushed DC Motor  Braking  Transmission AUIRFN8459 VDSS RDS(on) typ. max ID (Silicon Limited) ID (Package Limited) 40V 4.8m 5.9m 70A 50A G Gate DUAL PQFN 5X6 mm D Drain S Source Base Part Number Package Type AUIRFN8459 Dual PQFN 5mm x 6mm Standard Pack Form Quantity Tape and Reel 4000 Orderable Part Number AUIRFN8459TR Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolutemaximum-rated conditions for extended periods may affect device reliability....