IRFB4212PbF

PD - 96918A DIGITAL AUDIO MOSFET Features Key parameters optimized for Class-D audio amplifier applications Low RDSON for improved efficiency Low QG and QSW for better THD and improved efficiency Low QRR for better THD and lower EMI 175°C operating junction temperature for ruggedness Can deliver up to 150W per channel into 4Ω load in half-bridge topology G S IRFB4212PbF Key Parameters 100 72.5 15 8.3 2.2 175 D VDS RDS(ON) typ. @ 10V Qg typ. Qsw typ. RG(int) typ. TJ max V m: nC nC Ω °C TO-220AB Description This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD and EMI. Additional features of this MOSFET are 175°C operating junction temperature and repetitive avalanche capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for ClassD audio amplifier applications. Absolute Maximum Ratings Parameter VDS VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TC = 100°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current c Power Dissipation f Power Dissipation f Linear Derating Factor Operating Junction and ...