isc Silicon PNP Darlington Power Transistors
BDT62/A/B/C
DESCRIPTION ·DC Current Gain -hFE = 1000(Min)@ IC= -3A ·Colle...
isc Silicon
PNP Darlington Power
Transistors
BDT62/A/B/C
DESCRIPTION ·DC Current Gain -hFE = 1000(Min)@ IC= -3A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -60V(Min)- BDT62; -80V(Min)- BDT62A; -100V(Min)- BDT62B; -120V(Min)- BDT62C
·Complement to Type BDT63/A/B/C ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in audio amplifier output stages , general
purpose amplifier and high speed switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
BDT62
-60
VCBO
Collector-Base Voltage
BDT62A BDT62B
-80 -100
BDT62C
-120
BDT62
-60
VCEO
Collector-Emitter Voltage
BDT62A BDT62B
-80 -100
BDT62C
-120
VEBO
Emitter-Base Voltage
-5
IC
Collector Current-Continuous
-10
ICM
Collector Current-Peak
-15
IB
Base Current
PC
Collector Power Dissipation TC=25℃
Tj
Junction Temperature
-0.25 90 150
Tstg
Storage Ttemperature Range
-65~150
UNIT
V
V
V A A A W ℃ ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
Rth j-c Thermal Resistance,Junction to Ambient
isc website:www.iscsemi.com
MAX UNIT 1.39 ℃/W 70 ℃/W
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isc Silicon
PNP Darlington Power
Transistors
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BDT62
V(BR)CEO
Collector-Emitter Breakdown Voltage
BDT62A BDT62B
IC= -30mA; IB= 0
BDT62C
VCE(sat)-1 Collector-Emitter Saturation Voltage...