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2N4880 Dataheets PDF



Part Number 2N4880
Manufacturers New Jersey Semi-Conductor
Logo New Jersey Semi-Conductor
Description Dual NPN Transistor
Datasheet 2N4880 Datasheet2N4880 Datasheet (PDF)

, fine. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 FEATURES • High Gain At Low Current E • Low Output Capacitance C0uo<0.8pF • hp£ Match hj 2N4O44, 2N4045, 2H41OO, 2N4878, 2N4879, 2N4880 Dual Monolithic Matched NPN Silicon Planar Transistors hp > 200 @ 10 /nA PIN CONFIGURATION TO-71 TO-78 • Tight Vg£ Tracking A «v B E ,-v B _; • Dietectrically isolated matched pairs for differential amplifiers. ABSOLUTE MAXIMUM RATINGS ® 25".

  2N4880   2N4880



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, fine. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 FEATURES • High Gain At Low Current E • Low Output Capacitance C0uo<0.8pF • hp£ Match hj 2N4O44, 2N4045, 2H41OO, 2N4878, 2N4879, 2N4880 Dual Monolithic Matched NPN Silicon Planar Transistors hp > 200 @ 10 /nA PIN CONFIGURATION TO-71 TO-78 • Tight Vg£ Tracking A «v B E ,-v B _; • Dietectrically isolated matched pairs for differential amplifiers. ABSOLUTE MAXIMUM RATINGS ® 25"C (unless otherwise noted) Maximum Temperatures Storage Temperature -65°C to +200°C Operating Junction Temperature +200°C Maximum Power Dissipation ONE SIDE Tout Dittip*lion it 25?C 03 Win C»M T*mc«flture Dfrtling Factor 1.7mW/* BOTH SIDES ONE SIDE BOTH SIDES 0.9 Wilt 2,9mVV/'C *" «,% C' 0.4 Wnt 2.3mW/°C 0.75 Wall 4.3mW/'C CHIP TOPOGRAPHY 4000 2N4044 3N4100 2N4046 2N4878 2N4879 2N488O vcao vrso ~f 8AS£ VFO ceo 'e CoM«cior to 6»e Voltao* CoKector to Emitter Voltage Emitter to Baw Voltage (Note 2) Collector to Collector Voltage Collector Current 60V 60 V 7V 100V 10,,-.A ssv 55V 7 V 100V 10mA 45V 45V 7V 100 V 10mA i / I-1 •l | | h -COLLECTOR ^1 • •*— -COLLECTOS -1 JMM fJQlO mS S l > , J" 2PLOCES OSS' OM rvp. 2 PLACES .woo n,A ""•" -•»« V "iWltTER =7 \r ! HACIS J B I l„ VrjJITTtr, „ b) W ^ ORDERING INFORMATION TO-7B 2N4044 2N4045 2N4100 2N4878 2N4879 2N4880 ELECTRICAL CHARACTERISTICS (25°C unless otherwise noted) PARAMETER hp|= hpcj rtFE(-55°C) VBEIon) vCE(sat) ICBO iCBOI+ISO'C) |£BO C0bo DC Current Gain DC Current Cain DC Current Gain Emitter-Base On Voltage Collector Saturation Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current Output Capacitance 2N4044 2N4878 MIN 200 22S 75 0.7 2N4100 2N4879 2N4045 2N4880 UNIT TEST CONDITIONS TO-71 WAFER 01CE 2N4044/W 2N4CW4/D 2N404S/W 2N4CM5/D 2N4100/W 2N4100/D MAX 600 MIN 150 175 50 MAX 600 MIN 80 100 30 MAX 800 IC = 10//A. VCE = 5V 1C" 1.0mA, V C E ^ 5V IC= lOfiA, VCE = 5 V 0.7 0.35 0.7 0.35 V V nA *|A nA pF l c = 10/iA. VCE = 5 V 1C' 1.0mA, IB = 0.1 mA IE-O, VcB = *5V,30V lE-O.VCB= 45V,30V 0.3S 0.1 0.1 0.1 0.8 0.1 0.1 0.1 0.8 0,1 0.1 0.1 0.8 ic"0. VEB = SV IE = O, VCB = S V NJ Semi-Conductors reserves the right to change test conditions, parameters limits and package dimensions without notice information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors ELECTRICAL CHARACTERISTICS (25 *C unless otherwise noted) PARAMETER Emitter Transition Capacitance C2 Collector to Collector Capacitance Collector to Collector Leakage Current Collector to Emitter Sustaining Voltags Current Gain Bandwidth Product Current Gain Bandwidth Product Narrow Band Noise Figure Collector Base Breakdown Voltage Emitter Base Breakdown Voltage 60 7 2N4044 2N4878 MIN MAX 1 0.8 S 60 200 20 2 2N4100 2N4B79 MAX MIN 1 0.8 S 55 150 15 3 2N4046 2N4880 MIN MAX 1 0.8 S 45 150 15 3 UNIT TEST CONDITIONS CTE pF PF PA V MHz MHz dB >c = °. VEB = o.sv vcc - o vcc = ±toov cCi, 'Ci,C2 vCEO(sust) lc » 1mA, IB = 0 'T !T ic = 1mA, VCE « 10V ic - iO(iA, VCE * iov lc m 10,iA, VCE = 5V f = 1kMz Ra = 10kOhm» BW=200HZ NF BVceo BVEBO 55 7 45 7 V V ic ~ lOjiA, IE * o IE = io/iA. ic = o MATCHING CHARACTERISTICS (25 *C unless otherwise noted) h™ /h« hrel'hre2 'vBErvBE2l |, , | ^ ^ IA(VBE1-VBE2>I/'C °° Current Gain Ratio (Note 3) Base Emitter Voltage Differential Base Current Differential Base Current Differential Voltage Differential Change with Temperature 3 5 10 3.9 1 3 5 0.85 S 10 03 1 5 25 lc = 10*A to 1mA, mV nA lc - TOiiA, VCE = 5V IC = 10xA, VCE = 5V jtV/'C T A *± -55-C to -I-125'C VCE - 5V Change with Temperature 0.3 0.5 1 nA/'C T A = -S5-C to +12S'C SMALL SIGNAL CHARACTERISTICS PARAMETER hit, hrb h(. Ita, h|e hr( ho. Input Resistance voltage Feedback Ratio Small Signal Current Gain Output Conductance Input Resistance Voltage Feedback Ratio Output Conductance TYPICAL VALUE 28 4.3 290 0.6 9.6 4.2 12 UN|T UN'T TEST CONDITIONS ohms x 10-« x 10 - 7mhos k ohms x 10-* jimhos lc = 1mA, VCB 5V lc » 1mA, VCB 5V ""'" lc = lc = lc = I ™ lc - 1mA, VCB 5V 1mA, VCB 5V 1mA, VCB 5V imA. VCB 5V 1mA, VCB - 5V NOTES: 1, These ratings are limiting value* above which the serviceabllty of any semiconductor device may be Impaired. 2. The reverse base-tc-enter voltage must never exceed 7,0 volts and the reverse base-lc-emmer currant must never exceed 10 yamps. 3. The lowest of two hFE readings Is taken as hFC| for purposes of this ratio. .


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