SiA975DJ

New Product SiA975DJ Vishay Siliconix Dual P-Channel 12-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) 0.041 at VGS = - 4.5 V 0.060 at VGS = - 2.5 V 0.110 at VGS = - 1.8 V ID (A) - 4.5a - 4.5a - 3.5 10.5 nC Qg (Typ.) FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET New Thermally Enhanced PowerPAK® SC-70 Package - Small Footprint Area - Low On-Resistance 100 % Rg Tested Compliant to RoHS directive 2002/95/EC APPLICATIONS PowerPAK SC-70-6 Dual Load Switch, PA Switch and Battery Switch for Portable Devices and Game Consoles S1 S2 S1 D1 D1 6 5 2.05 mm G2 4 1 2 G1 D2 D2 3 Part # code Marking Code DJX XXX Lot Traceability and Date Code D1 Ordering Information: SiA975DJ-T1-GE3 (Lead (Pb)-free and Halogen-free) D2 G1 G2 S2 2.05 mm P-Channel MOSFET P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS Limit - 12 ±8 - 4.5a - 4.5a - 4.5a,b, c - 4.4b, c - 15 - 4.5a - 1.6b, c 7.8 5 1.9b, c 1.2b, c - 55 to 150 260 Unit V Continuous Drain Current (TJ = 150 °C) A Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipation PD TJ, Tstg W Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e °C THERMAL RESISTANCE RATINGS Symbol Typical Maximum U...