SiA911ADJ

New Product SiA911ADJ Vishay Siliconix Dual P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) 0.116 at VGS = - 4.5 V 0.155 at VGS = - 2.5 V 0.205 at VGS = - 1.8 V ID (A) - 4.5a - 4.5a - 4.5 a FEATURES Qg (Typ.) 4.9 nC Halogen-free TrenchFET® Power MOSFET New Thermally Enhanced PowerPAK® SC-70 Package - Small Footprint Area - Low On-Resistance RoHS COMPLIANT APPLICATIONS PowerPAK SC-70-6 Dual Load Switch, PA Switch and Battery Switch for Portable Devices S1 S2 S1 D1 D1 6 5 2.05 mm G2 4 1 2 G1 D2 D2 3 Part # Code Marking Code DGX XXX Lot Traceability and Date Code 2.05 mm D1 Ordering Information: SiA911ADJ-T1-GE3 (Lead (Pb)-free and Halogen-free) D2 G1 G2 S2 P-Channel MOSFET P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS Limit - 20 ±8 - 4.5a - 4.5a - 3.2b, c - 2.6b, c -8 - 4.5a - 1.5b, c 6.5 4.2 1.8b, c 1.1b, c - 55 to 150 260 Unit V Continuous Drain Current (TJ = 150 °C) A Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipation PD TJ, Tstg W Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, f Maximum Junction-to-Case (Drain) t≤5s Steady State Symbol RthJA RthJC Typical 55...