New Product
SiA814DJ
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET with Trench Schottky Diode
PRODUCT SUMMARY
VDS (V) ...
New Product
SiA814DJ
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET with Trench
Schottky Diode
PRODUCT SUMMARY
VDS (V) 30 RDS(on) (Ω) 0.061 at VGS = 10 V 0.072 at VGS = 4.5 V 0.110 at VGS = 2.5 V ID (A)a 4.5 4.5 4.5 Qg (Typ.) 3.2 nC
FEATURES
Halogen-free LITTLE FOOT® Plus
Schottky Power MOSFET New Thermally Enhanced PowerPAK® SC-70 Package - Small Footprint Area - Low On-Resistance - Thin 0.75 mm profile
RoHS
COMPLIANT
SCHOTTKY PRODUCT SUMMARY
VKA (V) 30 Vf (V) Diode Forward Voltage 0.56 at 1 A IF (A)a 2
APPLICATIONS
DC/DC Converter for Portable Devices Load Switch for Portable Devices
D
PowerPAK SC-70-6 Dual
K
2 NC K K D G 3 D
1 A
Marking Code
GBX 0.75 mm Part # code XXX Lot Traceability and Date code 2.05 mm S Ordering Information: SiA814DJ-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET A G
6 5 2.05 mm 4
S
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter Drain-Source Voltage (MOSFET) Reverse Voltage (
Schottky) Gate-Source Voltage (MOSFET) TC = 25 °C Continuous Drain Current (TJ = 150 °C) (MOSFET) TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current (MOSFET) Continuous Source-Drain Diode Current (MOSFET Diode Conduction) Average Forward Current (
Schottky) Pulsed Forward Current (
Schottky) TC = 25 °C Maximum Power Dissipation (MOSFET) TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C Maximum Power Dissipation (
Schottky) TC = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Pe...