SiA811ADJ

New Product SiA811ADJ Vishay Siliconix P-Channel 20-V (D-S) MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) 0.116 at VGS = - 4.5 V 0.155 at VGS = - 2.5 V 0.205 at VGS = - 1.8 V ID (A)a - 4.5 - 4.5 - 4.5 4.9 nC Qg FEATURES Halogen-free LITTLE FOOT® Plus Schottky Power MOSFET New Thermally Enhanced PowerPAK® SC-70 Package - Small Footprint Area - Low On-Resistance - Thin 0.75 mm profile RoHS COMPLIANT SCHOTTKY PRODUCT SUMMARY VKA (V) 20 Vf (V) Diode Forward Voltage 0.45 at 1 A IF (A)a 2 APPLICATIONS Cellular Charger Switch Asynchronous DC/DC for Portable Devices Load Switch for Portable Devices S K PowerPAK SC-70-6 Dual 1 A 2 NC K K D G 3 D Marking Code HD X 0.75 mm Part # Code XXX Lot Traceability and Date Code 2.05 mm G 6 5 2.05 mm 4 S D P-Channel MOSFET A Ordering Information: SiA811ADJ-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage (MOSFET) Reverse Voltage (Schottky) Gate-Source Voltage (MOSFET) TC = 25 °C Continuous Drain Current (TJ = 150 °C) (MOSFET) TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current (MOSFET) Continuous Source-Drain Diode Current (MOSFET Diode Conduction) Average Forward Current (Schottky) Pulsed Forward Current (Schottky) TC = 25 °C Maximum Power Dissipation (MOSFET) TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C Maximum Power Dissipation (Schottky) TC = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperatur...