VNN7NV04PTR-E

VNN7NV04P-E, VNS7NV04P-E OMNIFET II fully autoprotected Power MOSFET Features Type VNN7NV04P-E VNS7NV04P-E ■ ■ ■ ■ ■ ■ ■ ■ RDS(on) 60 mΩ Ilim 6A Vclamp 40 V 2 1 2 3 SOT-223 SO-8 Linear current limitation Thermal shutdown Short circuit protection Integrated clamp Low current drawn from input pin Diagnostic feedback through input pin ESD protection Direct access to the gate of the Power MOSFET (analog driving) Compatible with standard Power MOSFET in compliance with the 2002/95/EC European Directive Description The VNN7NV04P-E, VNS7NV04P-E, are monolithic devices designed in STMicroelectronics VIPower™ M0-3 Technology, intended for replacement of standard Power MOSFETs from DC up to 50 kHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments. Fault feedback can be detected by monitoring the voltage at the input pin. ■ Table 1. Package Device summary Order codes Tube Tape and reel VNN7NV04PTR-E VNS7NV04PTR-E SOT-223 SO-8 VNS7NV04P-E September 2013 Doc ID 15632 Rev 4 1/29 www.st.com 1 Contents VNN7NV04P-E, VNS7NV04P-E Contents 1 2 Block diagram and pin description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 2.1 2.2 2.3 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Thermal data . . . . . . . . . . . . . . . . . . ...