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SiA431DJ

Vishay

P-Channel 20-V (D-S) MOSFET

New Product SiA431DJ Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () 0.025 a...



SiA431DJ

Vishay


Octopart Stock #: O-848622

Findchips Stock #: 848622-F

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Description
New Product SiA431DJ Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () 0.025 at VGS = - 4.5 V - 20 0.031 at VGS = - 2.5 V 0.041 at VGS = - 1.8 V 0.070 at VGS = - 1.5 V ID (A) - 12 a Qg (Typ.) - 12a - 12a -4 24 nC New Thermally Enhanced PowerPAK® SC-70 Package - Small Footprint Area - Low On-Resistance 100 % Rg Tested Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TrenchFET® Power MOSFET APPLICATIONS Load Switch, PA Switch and Battery Switch for Portable Devices PowerPAK SC-70-6L-Single S 1 D 2 D 3 6 D 5 D S 4 S 2.05 mm Ordering Information: SiA431DJ-T4-GE3 (Lead (Pb)-free and Halogen-free) SiA431DJ-T1-GE3 (Lead (Pb)-free and Halogen-free) D P-Channel MOSFET G Part # code Marking Code BKX XXX Lot traceability and Date code G 2.05 mm ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS Limit - 20 ±8 - 12a - 12a - 9.6b, c - 7.7b, c - 30 - 12a - 2.9b, c 19 12 3.5b, c 2.2b, c - 55 to 150 260 Unit V A Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e PD TJ, Tstg W °C THERMAL RESISTANCE RATINGS Parameter Symbol Typi...




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