SiA425EDJ

SiA425EDJ Vishay Siliconix P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.060 at VGS = - 4.5 V - 20 0.065 at VGS = - 3.6 V 0.080 at VGS = - 2.5 V 0.120 at VGS = - 1.8 V ID (A) - 4.5a - 4.5a - 4.5a -2 4.9 nC Qg (Typ.) FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET New Thermally Enhanced PowerPAK® SC-70 Package - Small Footprint Area - Low On-Resistance Typical ESD Protection 2400 V 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS PowerPAK SC-70-6L-Single 1 D 2 D 3 6 D 5 D S 4 Ordering Information: SiA425EDJ-T1-GE3 (Lead (Pb)-free and Halogen-free) S 2.05 mm D P-Channel MOSFET Load Switch and Battery Switch for Portable Devices Marking Code S G BMX Part # code XXX Lot Traceability and Date code G R 2.05 mm ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS Limit - 20 ± 12 - 4.5a - 4.5a - 4.5a, b, c - 4.5a, b, c - 15 - 4.5a - 2.4b, c 15.6 10 2.9b, c 1.8b, c - 55 to 150 260 Unit V Continuous Drain Current (TJ = 150 °C) A Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipation PD TJ, Tstg W Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb...