SiA406DJ

New Product SiA406DJ Vishay Siliconix N-Channel 12-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 12 RDS(on) (Ω) 0.0198 at VGS = 4.5 V 0.0222 at VGS = 2.5 V 0.0264 at VGS = 1.8 V ID (A)a 4.5 4.5 4.5 13.7 nC Qg (Typ.) FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET New Thermally Enhanced PowerPAK® SC-70 Package - Small Footprint Area - Low On-Resistance 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC PowerPAK SC-70-6L-Single 1 D 2 D 3 6 D 5 D S 4 S 2.05 mm G Part # code AHX XXX APPLICATIONS Marking Code D Load Switch for Portable Devices DC/DC Converters G 2.05 mm Lot Traceability and Date code S Ordering Information: SiA406DJ-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage °C)a TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS Limit 12 ±8 4.5a 4.5a 4.5a, b, c 4.5a, b, c 20 4.5a 2.9b, c 19 12 3.5b, c 2.2b, c - 55 to 150 260 Unit V Continuous Drain Current (TJ = 150 Pulsed Drain Current A Continuous Source-Drain Diode Current Maximum Power Dissipation PD TJ, Tstg W Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, f Maximum Junction-to-Case (Drain) t≤5s Steady State Symbol RthJA RthJC Typic...