N-channel MOSFET
STB32NM50N, STF32NM50N, STP32NM50N, STW32NM50N
N-channel 500 V, 0.1 Ω typ., 22 A MDmesh™ II Power MOSFET in D²PAK, TO-22...
Description
STB32NM50N, STF32NM50N, STP32NM50N, STW32NM50N
N-channel 500 V, 0.1 Ω typ., 22 A MDmesh™ II Power MOSFET in D²PAK, TO-220FP, TO-220, TO-247 packages
Datasheet — production data
Features
TAB
Order codes STB32NM50N STF32NM50N STP32NM50N STW32NM50N
■ ■ ■
VDS
RDS(on) max.
ID
PTOT 190 W 35 W 190 W 190 W
2 3 1
3 1 2
D²PAK
TAB
500 V
0.13 Ω
TO-220FP
22 A
100% avalanche tested Low input capacitance and gate charge Low gate input resistance
TO-220
3 1 2
2 1
3
TO-247
Applications
■
Switching applications Figure 1. Internal schematic diagram
Description
These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
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Table 1.
Device summary
Marking Package D2PAK TO-220FP TO-220 TO-247 Packaging Tape and reel Tube Tube Tube
Order codes STB32NM50N STF32NM50N STP32NM50N STW32NM50N
32NM50N
August 2012
This is information on a product in full production.
Doc ID 023436 Rev 1
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Contents
STB32NM50N, STF32NM50N, STP32NM50N, STW32NM50N
Contents
1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....
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