2SD1664
Elektronische Bauelemente
R o H S C o m p lia n t P ro d u c t
D D1 A
NPN Silicon General Purpose Transistor
Features
SOT-89
E1
b1
1
L
Power dissipation PCM : 0.5 W (Tamb= 25 C) Collector current ICM : 1 A Collector-base voltage V(BR)CBO : 40 V Operating & Storage junction Temperature Tj, Tstg : -55 C~ +150 C
O O
2 3 o
e e1
b C
1.BASE 2.COLL...
