Document
2SK3018
N-Channel Enhancement Mode MOSFET
• Features
1) Low on-resistance. 2) Fast switching speed. 3) Low voltage drive (2.5V) makes this device ideal for portable equipment. 4) Easily designed drive circuits. 5) Easy to parallel.
• External dimensions
• Applications
Interfacing, switching (30V, 100mA)
Units:mm
• Structure
Silicon N-channel MOSFET
SOT-23 SOT-323
. Gate
. Source
. Drain
• Absolute maximum ratings (Ta = 25°C)
Parameter Drain-source voltage Gate-source voltage Drain current Reverse current drain Continuous Pulsed Continuous Pulsed
• Equivalent circuit
Limits 30 20 100 200 100 200 200 150 -55~+150 Unit V V mA mA mA mA mW °C °C
*Gate Protection Diode
Symbol
VDSS VGSS ID IDP*1 IDR IDRP*1 PD*2 Tch Tstg
Drain
Gate
Total power dissipation(Tc=25°C) Channel temperature Storage temperature
Source
*1Pw 10µs,Duty Cycle *2With each pin mounted on the recommended lands
*A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use. Use a protection circuit when the fixed voltages are exceeded.
1
JinYu
semiconductor
www.htsemi.com
Date:2011/05
2SK3018
N-Channel Enhancement Mode MOSFET
• Electrical characteristics (Ta = 25°C)
Parameter Gate-source leakage Drain-source breakdown voltage Zero gate voltage drain current Gate treshold Voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time
Symbo
IGSS V(BR)DS IDSS VGS(th) RDS(ON) R DS(ON) Yfs Ciss Coss Crss
Min. ---30 ---0.8 ------20 ----------------------
Typ. ------------5 7 ---13 9 4 15 35 80 80
Max. ±1 ---1 1.5 8 13 ----------
Unit µA V µA V
Test Conditions VGS=±20V,VDS=0V ID=10µA ,VGS=0V VDS=30V ,VGS=0V VDS=3V ,ID=100µA ID=10mA , VGS= 4V ID=1mA , VGS=2.5V
mS pF pF pF ns ns ns ns
VDS=3V, ID=10mA VDS=5V VGS=0V F=1 MHz ID=10 mA ,VDO=5V VGS= 5V RL=500 RGS=10
td(on) tr td(off) tr
• Packaging specifications
Package Type Code Basic ordering unit ( pieces ) 2SK3018 Taping T106 3000
• Electrical characteristic curves
2
JinYu
semiconductor
www.htsemi.com
Date:2011/05
2SK3018
N-Channel Enhancement Mode MOSFET
3
JinYu
semiconductor
www.htsemi.com
Date:2011/05
2SK3018
N-Channel Enhancement Mode MOSFET
• Switching characteristics measurement circuit
4
JinYu
semiconductor
www.htsemi.com
Date:2011/05
.