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2SK3018 Dataheets PDF



Part Number 2SK3018
Manufacturers JinYu
Logo JinYu
Description N-Channel Enhancement Mode MOSFET
Datasheet 2SK3018 Datasheet2SK3018 Datasheet (PDF)

2SK3018 N-Channel Enhancement Mode MOSFET • Features 1) Low on-resistance. 2) Fast switching speed. 3) Low voltage drive (2.5V) makes this device ideal for portable equipment. 4) Easily designed drive circuits. 5) Easy to parallel. • External dimensions • Applications Interfacing, switching (30V, 100mA) Units:mm • Structure Silicon N-channel MOSFET SOT-23 SOT-323 . Gate . Source . Drain • Absolute maximum ratings (Ta = 25°C) Parameter Drain-source voltage Gate-source voltage Drain curren.

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2SK3018 N-Channel Enhancement Mode MOSFET • Features 1) Low on-resistance. 2) Fast switching speed. 3) Low voltage drive (2.5V) makes this device ideal for portable equipment. 4) Easily designed drive circuits. 5) Easy to parallel. • External dimensions • Applications Interfacing, switching (30V, 100mA) Units:mm • Structure Silicon N-channel MOSFET SOT-23 SOT-323 . Gate . Source . Drain • Absolute maximum ratings (Ta = 25°C) Parameter Drain-source voltage Gate-source voltage Drain current Reverse current drain Continuous Pulsed Continuous Pulsed • Equivalent circuit Limits 30 20 100 200 100 200 200 150 -55~+150 Unit V V mA mA mA mA mW °C °C *Gate Protection Diode Symbol VDSS VGSS ID IDP*1 IDR IDRP*1 PD*2 Tch Tstg Drain Gate Total power dissipation(Tc=25°C) Channel temperature Storage temperature Source *1Pw 10µs,Duty Cycle *2With each pin mounted on the recommended lands *A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use. Use a protection circuit when the fixed voltages are exceeded. 1 JinYu semiconductor www.htsemi.com Date:2011/05 2SK3018 N-Channel Enhancement Mode MOSFET • Electrical characteristics (Ta = 25°C) Parameter Gate-source leakage Drain-source breakdown voltage Zero gate voltage drain current Gate treshold Voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Symbo IGSS V(BR)DS IDSS VGS(th) RDS(ON) R DS(ON) Yfs Ciss Coss Crss Min. ---30 ---0.8 ------20 ---------------------- Typ. ------------5 7 ---13 9 4 15 35 80 80 Max. ±1 ---1 1.5 8 13 ---------- Unit µA V µA V Test Conditions VGS=±20V,VDS=0V ID=10µA ,VGS=0V VDS=30V ,VGS=0V VDS=3V ,ID=100µA ID=10mA , VGS= 4V ID=1mA , VGS=2.5V mS pF pF pF ns ns ns ns VDS=3V, ID=10mA VDS=5V VGS=0V F=1 MHz ID=10 mA ,VDO=5V VGS= 5V RL=500 RGS=10 td(on) tr td(off) tr • Packaging specifications Package Type Code Basic ordering unit ( pieces ) 2SK3018 Taping T106 3000 • Electrical characteristic curves 2 JinYu semiconductor www.htsemi.com Date:2011/05 2SK3018 N-Channel Enhancement Mode MOSFET 3 JinYu semiconductor www.htsemi.com Date:2011/05 2SK3018 N-Channel Enhancement Mode MOSFET • Switching characteristics measurement circuit 4 JinYu semiconductor www.htsemi.com Date:2011/05 .


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