Single N-Channel PowerTrench MOSFET
FDMA8884 N-Channel Power Trench® MOSFET
May 2014
FDMA8884
Single N-Channel Power Trench® MOSFET
30 V, 6.5 A, 23 mΩ
Fea...
Description
FDMA8884 N-Channel Power Trench® MOSFET
May 2014
FDMA8884
Single N-Channel Power Trench® MOSFET
30 V, 6.5 A, 23 mΩ
Features
Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 6.5 A Max rDS(on) = 30 mΩ at VGS = 4.5 V, ID = 6.0 A High performance trench technology for extremely low rDS(on) Fast switching speed RoHS Compliant
General Description
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on) switching performance.
Application
Primary Switch
Pin 1
D
D
G D
Bottom Drain Contact
D D S
Drain
Source D G S D D MicroFET 2X2 (Bottom View)
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol VDS VGS ID Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) TC = 25 °C -Continuous -Pulsed PD TJ, TSTG Power Dissipation Power Dissipation Operating and Storage Junction Temperature Range (Note 1a) (Note 1b) TA = 25 °C (Note 1a) (Note 3) Ratings 30 ±20 8.0 6.5 25 1.9 0.7 -55 to +150 W °C A Units V V
Thermal Characteristics
RθJA RθJA Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient (Note 1a) (Note 1b) 65 180 °C/W
Package Marking and Ordering Information
Device Marking 884 Device FDMA8884 Package MicroFET 2x2 Reel Size 7 ’’ Tape Width 8 mm Quantity 3000 units
©2012 Fairchild Semiconductor Corporation FDMA8884 Rev.C5
1
www.fairchildsemi.com
FDMA8884 N-Channel Power Trench® MOSFET
Electrical Characteristics ...
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