Single N-Channel PowerTrench MOSFET
FDMA8878 Single N-Channel Power Trench® MOSFET
May 2012
FDMA8878
Single N-Channel Power Trench® MOSFET
30 V, 9.0 A, 16...
Description
FDMA8878 Single N-Channel Power Trench® MOSFET
May 2012
FDMA8878
Single N-Channel Power Trench® MOSFET
30 V, 9.0 A, 16 mΩ
Features
Max rDS(on) = 16 mΩ at VGS = 10 V, ID = 9.0 A Max rDS(on) = 19 mΩ at VGS = 4.5 V, ID = 8.5 A High performance trench technology for extremely low rDS(on) Fast switching speed RoHS Compliant
General Description
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance.
Application
DC/DC Buck Converters Load Switch in NB Notebook Battery Power Management
Pin 1
D
D
G D
Bottom Drain Contact
D D S
Drain
Source D G S D D MicroFET 2X2 (Bottom View)
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol VDS VGS ID Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package Limited) -Continuous -Pulsed PD TJ, TSTG Power Dissipation Power Dissipation TA = 25 °C TA = 25 °C (Note 1a) (Note 1b) TC = 25 °C TA = 25 °C (Note 1a) (Note 3) Ratings 30 ±20 10 9.0 40 2.4 0.9 -55 to +150 W °C A Units V V
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA RθJA Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient (Note 1a) (Note 1b) 52 145 °C/W
Package Marking and Ordering Information
Device Marking 878 Device FDMA8878 Package MicroFET 2x2 Reel Size 7 ’’ Tape Width 12 mm Quantity 3000 units
©2012 Fairchild Semiconductor Corporation FDMA8878 Rev.C
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