FDMA7670

FDMA7670 Single N-Channel Power Trench® MOSFET FDMA7670 Single N-Channel PowerTrench® MOSFET May 2014 30 V, 11 A, 15 mΩ Features General Description „ Max rDS(on) = 15 mΩ at VGS = 10 V, ID = 11 A „ Max rDS(on) = 22 mΩ at VGS = 4.5 V, ID = 9 A „ Low Profile - 0.8 mm maximum - in the new package MicroFET 2x2 mm „ Free from halogenated compounds and antimony oxides „ RoHS compliant This device has been designed to provide maximum efficiency and thermal performance for synchronous buck converters. The low rDS(on) and gate charge provide excellent switching performance. Application „ DC – DC Buck Converters Pin 1 Drain DD G Source Bottom Drain Contact D D D D G S DD S MicroFET 2X2 (Bottom View) MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDSS VGSS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed TA = 25 °C Power Dissipation TA = 25 °C Power Dissipation TA = 25 °C Operating and Storage Junction Temperature Range Thermal Characteristics (Note 1a) (Note 1a) (Note 1b) Ratings 30 ±20 11 24 2.4 0.9 –55 to +150 Units V V A W °C RθJC RθJA RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient Package Marking and Ordering Information 6.9 (Note 1a) 52 (Note 1b) 145 °C/W Device Marking 670 Device FDMA7670 Package MicroFET 2x2 Reel Size 7 ’’ Tape Width 12 mm Quantity 3000 units ©2012 Fairchild Semiconduc...