P-Channel MOSFET
DMP210DUFB4
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS RDS(on) 5Ω @ VGS = -4.5V 7Ω @ VGS = -2.5V 10Ω @ ...
Description
DMP210DUFB4
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS RDS(on) 5Ω @ VGS = -4.5V 7Ω @ VGS = -2.5V 10Ω @ VGS = -1.8V 15Ω @ VGS = -1.5V ID TA = +25°C -200mA -170mA -140mA -50mA
Features and Benefits
P-Channel MOSFET Low On-Resistance Very Low Gate Threshold Voltage VGS(TH) Low Input Capacitance Fast Switching Speed Ultra-Small Surfaced Mount Package Ultra-low package profile, 0.4mm maximum package height ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability
-20V
Description
This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Mechanical Data
Case: X2-DFN1006-3 Case Material: Molded Plastic, “Green” Molding Compound. Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish – NiPdAu over Copper leadframe. Solderable per MIL-STD-202, Method 208 e4 Weight: 0.001 grams (approximate)
Drain
Applications
DC-DC Converters Power Management Functions
UL
X2-DFN1006-3
S D G
Gate
ESD protected Bottom View
Top View Internal Schematic
Gate Protection Diode
Source
Equivalent Circuit
Ordering Information (Note 4)
Part Number DMP210DUFB4-7 DMP210DUFB4-7B
Notes:
Case X2-DFN1006-3...
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