DMN2016UTS

DMN2016UTS DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 1) ESD Protected Up To 2KV "Green" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data Case: TSSOP-8L Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Below Marking Information: See Page 4 Ordering Information: See Page 4 Weight: 0.039 grams (approximate) NEW PRODUCT D1 D2 TSSOP-8L G1 1 2 3 4 D S1 S1 G1 D S2 S2 G2 8 7 6 5 G2 S1 S2 ESD PROTECTED TO 2kV TOP VIEW BOTTOM VIEW Top View Pin Configuration Internal Schematic Maximum Ratings Drain-Source Voltage Gate-Source Voltage @TA = 25°C unless otherwise specified Symbol VDSS VGSS TA = 25°C TA = 85°C ID IDM Value 20 ±8 8.58 5.73 36 Unit V V A A Characteristic Continuous Drain Current (Note 3) Pulsed Drain Current (Note 4) Steady State Thermal Characteristics Characteristic Power Dissipation (Note 3) Thermal Resistance, Junction to Ambient @TA = 25°C (Note 3) Operating and Storage Temperature Range Notes: Symbol PD RθJA TJ, TSTG Value 0.88 141.57 -55 to +150 Unit W °C/W °C 1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 3. Device mounted ...