AON2880

AON2880 20V Dual N-Channel MOSFET General Description The AON2880 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device contains two MOSFETs arranged in a common-drain configuration to facilitate bi-directional battery charge control with reverse protection. Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS =4.5V) RDS(ON) (at VGS = 2.5V) 20V 7A < 21.5mΩ < 30.0mΩ ESD protected! DFN2*2 Top View Top View S2 G2 S1 G1 1 2 3 4 8 7 6 5 D D D D D D Pin1 Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current C TA=25° C Power Dissipation B TA=70° C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead C TA=25° TA=70° C VGS ID IDM PD TJ, TSTG Maximum 20 ±12 7 6 30 2.0 1.3 -55 to 150 Units V V A W ° C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 47 70 32 Max 60 85 40 Units ° C/W ° C/W ° C/W Rev 1 : Jan 2011 www.aosmd.com Page 1 of 5 AON2880 Electrical Characteristics (TJ=25° C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=20V, VGS=0V C TJ=55° VDS=0V, VGS= ±10V VDS=0V, IG=±250uA VDS=VGS ID=250µA VGS=10V, VDS=5V VGS=4.5V, ID=5A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=2.5V, ID=3A Forward Transconductance Diode Forward Voltage VDS=5V, ID=5A ...